Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5915DC-T1-GE3 SI5915DC-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 1096097-SI5915DC-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 3.4A
Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
Max Gate Charge: 9nC @ 4.5V
Maximum Rds On at Id,Vgs: 70 mOhm @ 3.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient

MOSFET 2P-CH 8V 3.4A 1206-8 Product overview: SI5915DC-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8V, 3.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8V, 3.4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI5915DC-T1-GE3 can be used for catalog matching and distributor lookup.