Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5915DC-T1-GE3 SI5915DC-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 1096097-SI5915DC-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 3.4A Gate-Source Threshold Voltage: 450mV @ 250μA (Min) Max Gate Charge: 9nC @ 4.5V Maximum Rds On at Id,Vgs: 70 mOhm @ 3.4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 1096097-SI5915DC-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 3.4A Gate-Source Threshold Voltage: 450mV @ 250μA (Min) Max Gate Charge: 9nC @ 4.5V Maximum Rds On at Id,Vgs: 70 mOhm @ 3.4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient
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Suppliers

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Product
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5915DC-T1-GE3 - 1096097-SI5915DC-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5915DC-T1-GE3
1096097-SI5915DC-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5915DC-T1-GE3 1096097-SI5915DC-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096097-SI5915DC-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 3.4A Gate-Source Threshold Voltage: 450mV @ 250μA (Min) Max Gate Charge: 9nC @ 4.5V Maximum Rds On at Id,Vgs: 70 mOhm @ 3.4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1096097-SI5915DC-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 3.4A
Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
Max Gate Charge: 9nC @ 4.5V
Maximum Rds On at Id,Vgs: 70 mOhm @ 3.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI5915DC-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI5915DC-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI5915DC-T1-GE3
MOSFET 2P-CH 8V 3.4A 1206-8

MOSFET 2P-CH 8V 3.4A 1206-8

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1096097-SI5915DC-T1-GE3 SI5915DC-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5915DC-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel
V(BR)DSS 8 volts
PD 1100 milliwatts
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