Vishay Intertechnology, Inc. FET, MOSFET Arrays SI5915BDC-T1-E3

Description
Mosfet Array 2 P-Channel (Dual) 8V 4A 3.1W Surface Mount 1206-8 ChipFET™
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Description
Mosfet Array 2 P-Channel (Dual) 8V 4A 3.1W Surface Mount 1206-8 ChipFET™
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SI5915BDC-T1-E3-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI5915BDC-T1-E3-ND
FET, MOSFET Arrays SI5915BDC-T1-E3-ND
Mosfet Array 2 P-Channel (Dual) 8V 4A 3.1W Surface Mount 1206-8 ChipFET™

Mosfet Array 2 P-Channel (Dual) 8V 4A 3.1W Surface Mount 1206-8 ChipFET™

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5915BDC-T1-E3 - 064537-SI5915BDC-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5915BDC-T1-E3
064537-SI5915BDC-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5915BDC-T1-E3 064537-SI5915BDC-T1-E3
Manufacturer: Vishay Win Source Part Number: 064537-SI5915BDC-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Maximum Power Dissipation: 3.1W Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 4A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 14nC @ 8V Max Input Capacitance: 420pF @ 4V Maximum Rds On at Id,Vgs: 70 mOhm @ 3.3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 064537-SI5915BDC-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 3.1W
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 4A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 14nC @ 8V
Max Input Capacitance: 420pF @ 4V
Maximum Rds On at Id,Vgs: 70 mOhm @ 3.3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI5915BDC-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI5915BDC-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI5915BDC-T1-E3
MOSFET 2P-CH 8V 4A 1206-8

MOSFET 2P-CH 8V 4A 1206-8

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI5915BDC-T1-E3-ND 064537-SI5915BDC-T1-E3 SI5915BDC-T1-E3
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5915BDC-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 8-SMD, Flat Leads SOT3; 1206-8 ChipFET
Polarity P-Channel
V(BR)DSS 8 volts
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