DUAL N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel Product overview: SI5908DC-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5908DC-T1-GE3 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 20V 4.4A 1.1W Surface Mount 1206-8 ChipFET™
Mosfet Array 2 N-Channel (Dual) 20V 4.4A 1.1W Surface Mount 1206-8 ChipFET™
Mosfet Array 2 N-Channel (Dual) 20V 4.4A 1.1W Surface Mount 1206-8 ChipFET™
Manufacturer: Vishay
Win Source Part Number: 126041-SI5908DC-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.4A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 7.5nC @ 4.5V
Maximum Rds On at Id,Vgs: 40 mOhm @ 4.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 20V 4.4A 1206-8
MOSFET 20V Vds 8V Vgs 1206-8 ChipFET
MOSFET 2N-CH 20V 4.4A 1206-8
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI5908DC-T1-GE3 | SI5908DC-T1-GE3CT-ND | 126041-SI5908DC-T1-GE3 | SI5908DC-T1-GE3 | SI5908DC-T1-GE3 | SI5908DC-T1-GE3 |
| Product Name | N-Channel Dual MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5908DC-T1-GE3 | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | |||
| PD | 1100 milliwatts | 1100 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | 8-SMD, Flat Leads | SOT3; 1206-8 ChipFET | 8-SMD, Flat Lead |
