Vishay Intertechnology, Inc. FET, MOSFET Arrays SI5906DU-T1-GE3

Description
Mosfet Array 2 N-Channel (Dual) 30V 6A 10.4W Surface Mount PowerPAK® ChipFet Dual
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Description
Mosfet Array 2 N-Channel (Dual) 30V 6A 10.4W Surface Mount PowerPAK® ChipFet Dual
Request a Quote Datasheet

Suppliers

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Description
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FET, MOSFET Arrays - SI5906DU-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI5906DU-T1-GE3TR-ND
FET, MOSFET Arrays SI5906DU-T1-GE3TR-ND
Mosfet Array 2 N-Channel (Dual) 30V 6A 10.4W Surface Mount PowerPAK® ChipFet Dual

Mosfet Array 2 N-Channel (Dual) 30V 6A 10.4W Surface Mount PowerPAK® ChipFet Dual

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5906DU-T1-GE3 - 1096095-SI5906DU-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5906DU-T1-GE3
1096095-SI5906DU-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5906DU-T1-GE3 1096095-SI5906DU-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096095-SI5906DU-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK ChipFet Dual Maximum Power Dissipation: 10.4W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6A Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 8.6nC @ 10V Max Input Capacitance: 300pF @ 15V Maximum Rds On at Id,Vgs: 31 mOhm @ 4.8A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096095-SI5906DU-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK ChipFet Dual
Maximum Power Dissipation: 10.4W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6A
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 8.6nC @ 10V
Max Input Capacitance: 300pF @ 15V
Maximum Rds On at Id,Vgs: 31 mOhm @ 4.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI5906DU-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI5906DU-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI5906DU-T1-GE3
MOSFET 2N-CH 30V 6A PPAK CHIPFET

MOSFET 2N-CH 30V 6A PPAK CHIPFET

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI5906DU-T1-GE3TR-ND 1096095-SI5906DU-T1-GE3 SI5906DU-T1-GE3
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5906DU-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type PowerPAK® ChipFET™ Dual SOT3; PowerPAK ChipFet Dual
Polarity N-Channel
V(BR)DSS 30 volts
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