Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5903DC-T1-E3 SI5903DC-T1-E3

Manufacturer: Vishay
Win Source Part Number: 102120-SI5903DC-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.1A
Gate-Source Threshold Voltage: 600mV @ 250μA (Min)
Max Gate Charge: 6nC @ 4.5V
Maximum Rds On at Id,Vgs: 155 mOhm @ 2.1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited

P-Channel JFET, 2.1A, -20V, 2-Ch, SMD Product overview: SI5903DC-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, 2.1A, -20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 2.1A, -20V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5903DC-T1-E3 can be used for catalog matching and distributor lookup.

Mosfet Array 2 P-Channel (Dual) 20V 2.1A 1.1W Surface Mount 1206-8 ChipFET™