Manufacturer: Vishay
Win Source Part Number: 1096093-SI5902BDC-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 3.12W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 7nC @ 10V
Max Input Capacitance: 220pF @ 15V
Maximum Rds On at Id,Vgs: 65 mOhm @ 3.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Mosfet Array 2 N-Channel (Dual) 30V 4A 3.12W Surface Mount 1206-8 ChipFET™
Mosfet Array 2 N-Channel (Dual) 30V 4A 3.12W Surface Mount 1206-8 ChipFET™
Mosfet Array 2 N-Channel (Dual) 30V 4A 3.12W Surface Mount 1206-8 ChipFET™
Dual N-Ch MOSFET, 30V, 4A, 65mR Rds(on), SMD Product overview: SI5902BDC-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, SMD, 30V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, SMD, 30V, 4A, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5902BDC-T1-GE3
MOSFET 2N-CH 30V 4A 1206-8
MOSFET 30V Vds 20V Vgs 1206-8 ChipFET
MOSFET, DUAL N CHANNEL, 30V, 4A, CHIPFET-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.053ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET, DUAL N-CH, 30V, 4A, CHIPFET-8, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.053ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1096093-SI5902BDC-T1-GE3 | SI5902BDC-T1-GE3DKR-ND | 278-SI5902BDC-T1-GE3 | SI5902BDC-T1-GE3 | SI5902BDC-T1-GE3 | 04X9765 | 86R3904 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5902BDC-T1-GE3 | FET, MOSFET Arrays | Dual SMD 30V 4A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Dual N Channel, 30V, 4A, Chipfet-8; Transistor Polarity Vishay | Mosfet, Dual N-Ch, 30V, 4A, Chipfet-8, Full Reel; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 30 volts | ||||||
| PD | 3120 milliwatts | 3120 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
