Mosfet Array 2 N-Channel (Dual) 30V 4A (Tc) 3.12W Surface Mount 1206-8 ChipFET™
Mosfet Array 2 N-Channel (Dual) 30V 4A (Tc) 3.12W Surface Mount 1206-8 ChipFET™
Mosfet Array 2 N-Channel (Dual) 30V 4A (Tc) 3.12W Surface Mount 1206-8 ChipFET™
Manufacturer: Vishay
Win Source Part Number: 1096092-SI5902BDC-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 3.12W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 7nC @ 10V
Max Input Capacitance: 220pF @ 15V
Maximum Rds On at Id,Vgs: 65 mOhm @ 3.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
N-Channel JFET, 30V, 3.7A, 65mR Rds On, SMD Product overview: SI5902BDC-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 30V, 3.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 3.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5902BDC-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 30V 4A 1206-8
MOSFET 30V Vds 20V Vgs 1206-8 ChipFET
DUAL N CHANNEL MOSFET, 30V, 1206; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.1ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Product Range:-RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI5902BDC-T1-E3TR-ND | 1096092-SI5902BDC-T1-E3 | 278-SI5902BDC-T1-E3 | SI5902BDC-T1-E3 | SI5902BDC-T1-E3 | 16P3794 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5902BDC-T1-E3 | N-Channel SMD 30V 3.7A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Dual N Channel Mosfet, 30V, 1206; Transistor Polarity Vishay |
| Package Type | 8-SMD, Flat Leads | SOT3; 1206-8 ChipFET | TO-3 | |||
| Polarity | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 30 volts | |||||
| PD | 3120 milliwatts | 3120 milliwatts |
