Vishay Intertechnology, Inc. FET, MOSFET Arrays SI5515DC-T1-E3

Description
MOSFET N/P-CH 20V 4.4A 1206-8
Request a Quote Datasheet
Description
MOSFET N/P-CH 20V 4.4A 1206-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SI5515DC-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI5515DC-T1-E3
FET, MOSFET Arrays SI5515DC-T1-E3
MOSFET N/P-CH 20V 4.4A 1206-8

MOSFET N/P-CH 20V 4.4A 1206-8

Supplier's Site Datasheet
Singapore
20V 4.4A 3A MOSFET Transistor
289-SI5515DC-T1-E3
20V 4.4A 3A MOSFET Transistor 289-SI5515DC-T1-E3
MOSFET N/P-CH 20V 4.4A/3A 1206-8 Product overview: SI5515DC-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.4A, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.4A, 3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI5515DC-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET N/P-CH 20V 4.4A/3A 1206-8 Product overview: SI5515DC-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.4A, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.4A, 3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI5515DC-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5515DC-T1-E3 - 028580-SI5515DC-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5515DC-T1-E3
028580-SI5515DC-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5515DC-T1-E3 028580-SI5515DC-T1-E3
Manufacturer: Vishay Win Source Part Number: 028580-SI5515DC-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.4A, 3A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 7.5nC @ 4.5V Maximum Rds On at Id,Vgs: 40 mOhm @ 4.4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028580-SI5515DC-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.4A, 3A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 7.5nC @ 4.5V
Maximum Rds On at Id,Vgs: 40 mOhm @ 4.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - SI5515DC-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI5515DC-T1-E3TR-ND
FET, MOSFET Arrays SI5515DC-T1-E3TR-ND
Mosfet Array N and P-Channel 20V 4.4A, 3A 1.1W Surface Mount 1206-8 ChipFET™

Mosfet Array N and P-Channel 20V 4.4A, 3A 1.1W Surface Mount 1206-8 ChipFET™

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI5515DC-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI5515DC-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI5515DC-T1-E3
MOSFET N/P-CH 20V 4.4A/3A 1206-8

MOSFET N/P-CH 20V 4.4A/3A 1206-8

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number SI5515DC-T1-E3 289-SI5515DC-T1-E3 028580-SI5515DC-T1-E3 SI5515DC-T1-E3TR-ND SI5515DC-T1-E3
Product Name FET, MOSFET Arrays 20V 4.4A 3A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5515DC-T1-E3 FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; N and P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
IDSS 4400 milliamps
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4 suppliers