MOSFET N/P-CH 20V 4.4A 1206-8
Manufacturer: Vishay
Win Source Part Number: 028580-SI5515DC-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.4A, 3A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 7.5nC @ 4.5V
Maximum Rds On at Id,Vgs: 40 mOhm @ 4.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Mosfet Array N and P-Channel 20V 4.4A, 3A 1.1W Surface Mount 1206-8 ChipFET™
MOSFET N/P-CH 20V 4.4A/3A 1206-8
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | SI5515DC-T1-E3 | 028580-SI5515DC-T1-E3 | SI5515DC-T1-E3TR-ND | SI5515DC-T1-E3 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5515DC-T1-E3 | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; N and P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 20 volts | 20 volts | ||
| IDSS | 4400 milliamps |
