Manufacturer: Vishay
Win Source Part Number: 113654-SI5515CDC-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: Si5515CDC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 3.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4A
Gate-Source Threshold Voltage: 800mV @ 250μA
Max Gate Charge: 11.3nC @ 5V
Max Input Capacitance: 632pF @ 10V
Maximum Rds On at Id,Vgs: 36 mOhm @ 6A, 4.5V
Alternative Parts (Cross-Reference): NTHD3100CT1G; NTHD3100CT1; NTHD3100CT3G; NTHD3102CT1G;
Introduction Date: July 29, 2008
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
N/P-Ch 1206-8 ChipFET 20V 40/100mohm @
N/P-Ch 1206-8 ChipFET 20V 40/100mohm @
N/P-Ch 1206-8 ChipFET 20V 40/100mohm @
Mosfet Array N and P-Channel 20V 4A 3.1W Surface Mount 1206-8 ChipFET™
Mosfet Array N and P-Channel 20V 4A 3.1W Surface Mount 1206-8 ChipFET™
Mosfet Array N and P-Channel 20V 4A 3.1W Surface Mount 1206-8 ChipFET™
Power Field-Effect Transistor, 4A I(D), 20V, 0.036ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1206-8, CHIPFET-8 Product overview: SI5515CDC-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, P-Channel, 4A, 20V, 0.036ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4A, 20V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5515CDC-T1-GE3
MOSFET N/P-CH 20V 4A 1206-8
Dual MOSFET, N and P Channel, 4 A, 20 V, 0.03 ohm, 4.5 V, 400 mV RoHS Compliant: Yes
MOSFET -20V Vds 8V Vgs 1206-8 ChipFET
MOSFET N/P-CH 20V 4A 1206-8
| Win Source Electronics | RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 113654-SI5515CDC-T1-GE3 | 1807787 | SI5515CDC-T1-GE3TR-ND | 278-SI5515CDC-T1-GE3 | SI5515CDC-T1-GE3 | 97W2671 | SI5515CDC-T1-GE3 | SI5515CDC-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5515CDC-T1-GE3 | MOSFETs | FET, MOSFET Arrays | N-Channel P-Channel 4A 20V MOSFET Transistor | FET, MOSFET Arrays | Dual Mosfet, N And P Channel, 4 A, 20 V, 0.03 Ohm, 4.5 V, 400 Mv Rohs Compliant Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | N-Channel; P-Channel | P-Channel; N and P-Channel | P-Channel | ||||
| V(BR)DSS | 20 volts | 20 volts | ||||||
| PD | 3100 milliwatts | 3100 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
