Vishay Intertechnology, Inc. FET, MOSFET Arrays SI5513DC-T1-GE3

Description
Mosfet Array N and P-Channel 20V 3.1A, 2.1A 1.1W Surface Mount 1206-8 ChipFET™
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Description
Mosfet Array N and P-Channel 20V 3.1A, 2.1A 1.1W Surface Mount 1206-8 ChipFET™
Request a Quote Datasheet

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FET, MOSFET Arrays - SI5513DC-T1-GE3-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI5513DC-T1-GE3-ND
FET, MOSFET Arrays SI5513DC-T1-GE3-ND
Mosfet Array N and P-Channel 20V 3.1A, 2.1A 1.1W Surface Mount 1206-8 ChipFET™

Mosfet Array N and P-Channel 20V 3.1A, 2.1A 1.1W Surface Mount 1206-8 ChipFET™

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - 1278455-SI5513DC-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
1278455-SI5513DC-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays 1278455-SI5513DC-T1-GE3
Win Source Part Number: 1278455-SI5513DC-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Series: TrenchFET® Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.1A Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Power - Max: 1.1W Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET™ Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SI5513 Product Status: Obsolete

Win Source Part Number: 1278455-SI5513DC-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Series: TrenchFET®
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.1A
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power - Max: 1.1W
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SI5513
Product Status: Obsolete

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI5513DC-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI5513DC-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI5513DC-T1-GE3
MOSFET N/P-CH 20V 3.1A 1206-8

MOSFET N/P-CH 20V 3.1A 1206-8

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors RF Transistors
Product Number SI5513DC-T1-GE3-ND 1278455-SI5513DC-T1-GE3 SI5513DC-T1-GE3
Product Name FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 8-SMD, Flat Leads SOT3
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