MOSFET N/P-CH 20V 3.1A 1206-8 Product overview: SI5513DC-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.1A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI5513DC-T1-E3 can be used for catalog matching and distributor lookup.
Mosfet Array N and P-Channel 20V 3.1A, 2.1A 1.1W Surface Mount 1206-8 ChipFET™
Manufacturer: Vishay
Win Source Part Number: 028579-SI5513DC-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.1A, 2.1A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 6nC @ 4.5V
Maximum Rds On at Id,Vgs: 75 mOhm @ 3.1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
MOSFET N/P-CH 20V 3.1A 1206-8
MOSFET N/P-CH 20V 3.1A 1206-8
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-SI5513DC-T1-E3 | SI5513DC-T1-E3TR-ND | 028579-SI5513DC-T1-E3 | SI5513DC-T1-E3 | SI5513DC-T1-E3 |
| Product Name | 20V 3.1A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5513DC-T1-E3 | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tape & Reel (TR) | 8-SMD, Flat Leads | SOT3; 1206-8 ChipFET | 8-SMD, Flat Lead | |
| Packing Method | Tape & Reel (TR) | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||
| Polarity | P-Channel | P-Channel; N and P-Channel |
