Vishay Intertechnology, Inc. FET, MOSFET Arrays SI5513DC-T1-E3

MOSFET N/P-CH 20V 3.1A 1206-8

Mosfet Array N and P-Channel 20V 3.1A, 2.1A 1.1W Surface Mount 1206-8 ChipFET™

Manufacturer: Vishay
Win Source Part Number: 028579-SI5513DC-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.1A, 2.1A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 6nC @ 4.5V
Maximum Rds On at Id,Vgs: 75 mOhm @ 3.1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance

MOSFET N/P-CH 20V 3.1A 1206-8 Product overview: SI5513DC-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.1A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI5513DC-T1-E3 can be used for catalog matching and distributor lookup.