Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5513CDC-T1-GE3 SI5513CDC-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 028578-SI5513CDC-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Maximum Power Dissipation: 3.1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4A, 3.7A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 4.2nC @ 5V Max Input Capacitance: 285pF @ 10V Maximum Rds On at Id,Vgs: 55 mOhm @ 4.4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 028578-SI5513CDC-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Maximum Power Dissipation: 3.1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4A, 3.7A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 4.2nC @ 5V Max Input Capacitance: 285pF @ 10V Maximum Rds On at Id,Vgs: 55 mOhm @ 4.4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5513CDC-T1-GE3 - 028578-SI5513CDC-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5513CDC-T1-GE3
028578-SI5513CDC-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5513CDC-T1-GE3 028578-SI5513CDC-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028578-SI5513CDC-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Maximum Power Dissipation: 3.1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4A, 3.7A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 4.2nC @ 5V Max Input Capacitance: 285pF @ 10V Maximum Rds On at Id,Vgs: 55 mOhm @ 4.4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 028578-SI5513CDC-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 3.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4A, 3.7A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 4.2nC @ 5V
Max Input Capacitance: 285pF @ 10V
Maximum Rds On at Id,Vgs: 55 mOhm @ 4.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
MOSFETs - 2567373 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2567373
MOSFETs 2567373
N/P-Ch Mosfet

N/P-Ch Mosfet

Supplier's Site
MOSFETs - 2567373P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2567373P
MOSFETs 2567373P
N/P-Ch Mosfet

N/P-Ch Mosfet

Supplier's Site
MOSFETs - 2567372 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2567372
MOSFETs 2567372
N/P-Ch Mosfet

N/P-Ch Mosfet

Supplier's Site
Singapore, Singapore
SMD 20V 4A MOSFET Transistor
278-SI5513CDC-T1-GE3
SMD 20V 4A MOSFET Transistor 278-SI5513CDC-T1-GE3
N/P-Ch JFET, 20V, 4A ID, 150mR Rds(on), SMD Product overview: SI5513CDC-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 20V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5513CDC-T1-GE3 can be used for catalog matching and distributor lookup.

N/P-Ch JFET, 20V, 4A ID, 150mR Rds(on), SMD Product overview: SI5513CDC-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 20V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5513CDC-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - SI5513CDC-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI5513CDC-T1-GE3TR-ND
FET, MOSFET Arrays SI5513CDC-T1-GE3TR-ND
Mosfet Array N and P-Channel 20V 4A, 3.7A 3.1W Surface Mount 1206-8 ChipFET™

Mosfet Array N and P-Channel 20V 4A, 3.7A 3.1W Surface Mount 1206-8 ChipFET™

Buy Now Datasheet
FET, MOSFET Arrays - SI5513CDC-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI5513CDC-T1-GE3CT-ND
FET, MOSFET Arrays SI5513CDC-T1-GE3CT-ND
Mosfet Array N and P-Channel 20V 4A, 3.7A 3.1W Surface Mount 1206-8 ChipFET™

Mosfet Array N and P-Channel 20V 4A, 3.7A 3.1W Surface Mount 1206-8 ChipFET™

Buy Now Datasheet
FET, MOSFET Arrays - SI5513CDC-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI5513CDC-T1-GE3DKR-ND
FET, MOSFET Arrays SI5513CDC-T1-GE3DKR-ND
Mosfet Array N and P-Channel 20V 4A, 3.7A 3.1W Surface Mount 1206-8 ChipFET™

Mosfet Array N and P-Channel 20V 4A, 3.7A 3.1W Surface Mount 1206-8 ChipFET™

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI5513CDC-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI5513CDC-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI5513CDC-T1-GE3
MOSFET N/P-CH 20V 4A/3.7A 1206-8

MOSFET N/P-CH 20V 4A/3.7A 1206-8

Supplier's Site
MOSFET 20V Vds 12V Vgs 1206-8 ChipFET

MOSFET 20V Vds 12V Vgs 1206-8 ChipFET

Buy Now Datasheet
FET, MOSFET Arrays - SI5513CDC-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI5513CDC-T1-GE3
FET, MOSFET Arrays SI5513CDC-T1-GE3
MOSFET N/P-CH 20V 4A 1206-8

MOSFET N/P-CH 20V 4A 1206-8

Supplier's Site Datasheet
Mosfet, N & P Channel, 20V, 4A, Chipfet-8; Transistor Polarity Vishay - 04X9764 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N & P Channel, 20V, 4A, Chipfet-8; Transistor Polarity Vishay
04X9764
Mosfet, N & P Channel, 20V, 4A, Chipfet-8; Transistor Polarity Vishay 04X9764
MOSFET, N & P CHANNEL, 20V, 4A, CHIPFET-8; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

MOSFET, N & P CHANNEL, 20V, 4A, CHIPFET-8; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N & P-Ch, 20V, 4A, Chipfet-8; Transistor Polarity Vishay - 86R3900 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N & P-Ch, 20V, 4A, Chipfet-8; Transistor Polarity Vishay
86R3900
Mosfet, N & P-Ch, 20V, 4A, Chipfet-8; Transistor Polarity Vishay 86R3900
MOSFET, N & P-CH, 20V, 4A, CHIPFET-8; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount; Product Range:-RoHS Compliant: Yes

MOSFET, N & P-CH, 20V, 4A, CHIPFET-8; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount; Product Range:-RoHS Compliant: Yes

Supplier's Site
Mosfet, Dual, Complement, 20V/4A/chipfet Rohs Compliant Vishay - 57AJ0451 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual, Complement, 20V/4A/chipfet Rohs Compliant Vishay
57AJ0451
Mosfet, Dual, Complement, 20V/4A/chipfet Rohs Compliant Vishay 57AJ0451
MOSFET, DUAL, COMPLEMENT, 20V/4A/CHIPFET ROHS COMPLIANT: YES

MOSFET, DUAL, COMPLEMENT, 20V/4A/CHIPFET ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Win Source Electronics RS Components, Ltd. ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED ODG (Origin Data Global) Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 028578-SI5513CDC-T1-GE3 2567373 278-SI5513CDC-T1-GE3 SI5513CDC-T1-GE3TR-ND SI5513CDC-T1-GE3 SI5513CDC-T1-GE3 SI5513CDC-T1-GE3 04X9764 86R3900 57AJ0451
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5513CDC-T1-GE3 MOSFETs SMD 20V 4A MOSFET Transistor FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET FET, MOSFET Arrays Mosfet, N & P Channel, 20V, 4A, Chipfet-8; Transistor Polarity Vishay Mosfet, N & P-Ch, 20V, 4A, Chipfet-8; Transistor Polarity Vishay Mosfet, Dual, Complement, 20V/4A/chipfet Rohs Compliant Vishay
Polarity P-Channel N-Channel; P-Channel P-Channel; N and P-Channel P-Channel
V(BR)DSS 20 volts 20 volts
PD 3100 milliwatts 3100 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 1206-8 ChipFET ChipFET 8-SMD, Flat Leads 8-SMD, Flat Lead TO-3 TO-3 TO-3
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