Mosfet Array N and P-Channel 20V 4A, 3.7A 3.1W Surface Mount 1206-8 ChipFET™
Mosfet Array N and P-Channel 20V 4A, 3.7A 3.1W Surface Mount 1206-8 ChipFET™
Mosfet Array N and P-Channel 20V 4A, 3.7A 3.1W Surface Mount 1206-8 ChipFET™
Manufacturer: Vishay
Win Source Part Number: 028578-SI5513CDC-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 3.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4A, 3.7A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 4.2nC @ 5V
Max Input Capacitance: 285pF @ 10V
Maximum Rds On at Id,Vgs: 55 mOhm @ 4.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
N/P-Ch JFET, 20V, 4A ID, 150mR Rds(on), SMD Product overview: SI5513CDC-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 20V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5513CDC-T1-GE3
MOSFET N/P-CH 20V 4A 1206-8
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MOSFET, DUAL, COMPLEMENT, 20V/4A/CHIPFET ROHS COMPLIANT: YES
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI5513CDC-T1-GE3TR-ND | 028578-SI5513CDC-T1-GE3 | 278-SI5513CDC-T1-GE3 | 2567373 | SI5513CDC-T1-GE3 | SI5513CDC-T1-GE3 | SI5513CDC-T1-GE3 | 04X9764 | 86R3900 | 57AJ0451 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5513CDC-T1-GE3 | SMD 20V 4A MOSFET Transistor | MOSFETs | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N & P Channel, 20V, 4A, Chipfet-8; Transistor Polarity Vishay | Mosfet, N & P-Ch, 20V, 4A, Chipfet-8; Transistor Polarity Vishay | Mosfet, Dual, Complement, 20V/4A/chipfet Rohs Compliant Vishay |
| Package Type | 8-SMD, Flat Leads | SOT3; 1206-8 ChipFET | ChipFET | 8-SMD, Flat Lead | TO-3 | TO-3 | TO-3 | |||
| Polarity | P-Channel | N-Channel; P-Channel | P-Channel; N and P-Channel | P-Channel | ||||||
| V(BR)DSS | 20 volts | 20 volts | ||||||||
| PD | 3100 milliwatts | 3100 milliwatts | ||||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
