Vishay Intertechnology, Inc. P-Channel SMD 20V 3.7A MOSFET Transistor SI5513CDC-T1-E3

N/P-Channel JFET, 20V, 3.7A, 55mR Rds(on), SMD Product overview: SI5513CDC-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, 20V, 3.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 3.7A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI5513CDC-T1-E3 can be used for catalog matching and distributor lookup.

Mosfet Array N and P-Channel 20V 4A, 3.7A 3.1W Surface Mount 1206-8 ChipFET™

Mosfet Array N and P-Channel 20V 4A, 3.7A 3.1W Surface Mount 1206-8 ChipFET™

Mosfet Array N and P-Channel 20V 4A, 3.7A 3.1W Surface Mount 1206-8 ChipFET™

MOSFET N/P-CH 20V 4A 1206-8

Manufacturer: Vishay
Win Source Part Number: 322427-SI5513CDC-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 3.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4A, 3.7A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 4.2nC @ 5V
Max Input Capacitance: 285pF @ 10V
Maximum Rds On at Id,Vgs: 55 mOhm @ 4.3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited