Vishay Intertechnology, Inc. FET, MOSFET Arrays SI5504DC-T1-E3

Mosfet Array N and P-Channel 30V 2.9A, 2.1A 1.1W Surface Mount 1206-8 ChipFET™

Manufacturer: Vishay
Win Source Part Number: 097505-SI5504DC-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.9A, 2.1A
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 7.5nC @ 10V
Maximum Rds On at Id,Vgs: 85 mOhm @ 2.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient

MOSFET N/P-CH 30V 2.9A 1206-8 Product overview: SI5504DC-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.9A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI5504DC-T1-E3 can be used for catalog matching and distributor lookup.