Vishay Intertechnology, Inc. FET, MOSFET Arrays SI5504BDC-T1-GE3

Mosfet Array N and P-Channel 30V 4A, 3.7A 3.12W, 3.1W Surface Mount 1206-8 ChipFET™

Mosfet Array N and P-Channel 30V 4A, 3.7A 3.12W, 3.1W Surface Mount 1206-8 ChipFET™

Manufacturer: Vishay
Win Source Part Number: 102119-SI5504BDC-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 3.12W, 3.1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4A, 3.7A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 7nC @ 10V
Max Input Capacitance: 220pF @ 15V
Maximum Rds On at Id,Vgs: 65 mOhm @ 3.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

2-Ch N/P-Ch MOSFET, 30V, 3.7A, 65mΩ, SMD Product overview: SI5504BDC-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 3.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 3.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5504BDC-T1-GE3 can be used for catalog matching and distributor lookup.