2-Ch N/P-Ch MOSFET, 30V, 3.7A, 65mΩ, SMD Product overview: SI5504BDC-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 3.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 3.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5504BDC-T1-GE3
Manufacturer: Vishay
Win Source Part Number: 102119-SI5504BDC-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 3.12W, 3.1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4A, 3.7A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 7nC @ 10V
Max Input Capacitance: 220pF @ 15V
Maximum Rds On at Id,Vgs: 65 mOhm @ 3.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Mosfet Array N and P-Channel 30V 4A, 3.7A 3.12W, 3.1W Surface Mount 1206-8 ChipFET™
Mosfet Array N and P-Channel 30V 4A, 3.7A 3.12W, 3.1W Surface Mount 1206-8 ChipFET™
MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3
MOSFET N/P-CH 30V 4A/3.7A 1206-8
MOSFET N/P-CH 30V 4A 1206-8
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI5504BDC-T1-GE3 | 102119-SI5504BDC-T1-GE3 | SI5504BDC-T1-GE3TR-ND | SI5504BDC-T1-GE3 | SI5504BDC-T1-GE3 | SI5504BDC-T1-GE3 |
| Product Name | SMD 30V 3.7A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5504BDC-T1-GE3 | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FET, MOSFET Arrays |
| Polarity | N-Channel; P-Channel | P-Channel | P-Channel; N and P-Channel | |||
| PD | 3100 milliwatts | 3120 to 3100 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| V(BR)DSS | 30 volts | 30 volts |
