N/P-Channel MOSFET 30V 4A 65mR SMD Product overview: SI5504BDC-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, 30V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5504BDC-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET N/P-CH 30V 4A 1206-8
Mosfet Array N and P-Channel 30V 4A, 3.7A 3.12W, 3.1W Surface Mount 1206-8 ChipFET™
Mosfet Array N and P-Channel 30V 4A, 3.7A 3.12W, 3.1W Surface Mount 1206-8 ChipFET™
Manufacturer: Vishay
Win Source Part Number: 1096090-SI5504BDC-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 3.12W, 3.1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4A, 3.7A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 7nC @ 10V
Max Input Capacitance: 220pF @ 15V
Maximum Rds On at Id,Vgs: 65 mOhm @ 3.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
DUAL MOSFET,N/P-CH, 30V, 4A/1206 CHIPFET ROHS COMPLIANT: YES
MOSFET N/P-CH 30V 4A/3.7A 1206-8
MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI5504BDC-T1-E3 | SI5504BDC-T1-E3 | SI5504BDC-T1-E3CT-ND | 1096090-SI5504BDC-T1-E3 | 57AJ0450 | SI5504BDC-T1-E3 | SI5504BDC-T1-E3 |
| Product Name | P-Channel SMD 30V 4A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5504BDC-T1-E3 | Dual Mosfet,n/p-Ch, 30V, 4A/1206 Chipfet Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; P-Channel | P-Channel; N and P-Channel | P-Channel | ||||
| PD | 3100 milliwatts | 3120 to 3100 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
