Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5504BDC-T1-E3 SI5504BDC-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 1096090-SI5504BDC-T1 -E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Maximum Power Dissipation: 3.12W, 3.1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4A, 3.7A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 7nC @ 10V Max Input Capacitance: 220pF @ 15V Maximum Rds On at Id,Vgs: 65 mOhm @ 3.1A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 1096090-SI5504BDC-T1 -E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Maximum Power Dissipation: 3.12W, 3.1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4A, 3.7A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 7nC @ 10V Max Input Capacitance: 220pF @ 15V Maximum Rds On at Id,Vgs: 65 mOhm @ 3.1A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5504BDC-T1-E3 - 1096090-SI5504BDC-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5504BDC-T1-E3
1096090-SI5504BDC-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5504BDC-T1-E3 1096090-SI5504BDC-T1-E3
Manufacturer: Vishay Win Source Part Number: 1096090-SI5504BDC-T1 -E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Maximum Power Dissipation: 3.12W, 3.1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4A, 3.7A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 7nC @ 10V Max Input Capacitance: 220pF @ 15V Maximum Rds On at Id,Vgs: 65 mOhm @ 3.1A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096090-SI5504BDC-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 3.12W, 3.1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4A, 3.7A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 7nC @ 10V
Max Input Capacitance: 220pF @ 15V
Maximum Rds On at Id,Vgs: 65 mOhm @ 3.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

Buy Now
FET, MOSFET Arrays - SI5504BDC-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI5504BDC-T1-E3
FET, MOSFET Arrays SI5504BDC-T1-E3
MOSFET N/P-CH 30V 4A 1206-8

MOSFET N/P-CH 30V 4A 1206-8

Supplier's Site Datasheet
FET, MOSFET Arrays - SI5504BDC-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI5504BDC-T1-E3CT-ND
FET, MOSFET Arrays SI5504BDC-T1-E3CT-ND
Mosfet Array N and P-Channel 30V 4A, 3.7A 3.12W, 3.1W Surface Mount 1206-8 ChipFET™

Mosfet Array N and P-Channel 30V 4A, 3.7A 3.12W, 3.1W Surface Mount 1206-8 ChipFET™

Buy Now Datasheet
FET, MOSFET Arrays - SI5504BDC-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI5504BDC-T1-E3TR-ND
FET, MOSFET Arrays SI5504BDC-T1-E3TR-ND
Mosfet Array N and P-Channel 30V 4A, 3.7A 3.12W, 3.1W Surface Mount 1206-8 ChipFET™

Mosfet Array N and P-Channel 30V 4A, 3.7A 3.12W, 3.1W Surface Mount 1206-8 ChipFET™

Buy Now Datasheet
Singapore
P-Channel SMD 30V 4A MOSFET Transistor
278-SI5504BDC-T1-E3
P-Channel SMD 30V 4A MOSFET Transistor 278-SI5504BDC-T1-E3
N/P-Channel MOSFET 30V 4A 65mR SMD Product overview: SI5504BDC-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, 30V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5504BDC-T1-E3 can be used for catalog matching and distributor lookup.

N/P-Channel MOSFET 30V 4A 65mR SMD Product overview: SI5504BDC-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, 30V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5504BDC-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3

MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI5504BDC-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI5504BDC-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI5504BDC-T1-E3
MOSFET N/P-CH 30V 4A/3.7A 1206-8

MOSFET N/P-CH 30V 4A/3.7A 1206-8

Supplier's Site
Dual Mosfet,n/p-Ch, 30V, 4A/1206 Chipfet Rohs Compliant Vishay - 57AJ0450 - Newark, An Avnet Company
Chicago, IL, United States
Dual Mosfet,n/p-Ch, 30V, 4A/1206 Chipfet Rohs Compliant Vishay
57AJ0450
Dual Mosfet,n/p-Ch, 30V, 4A/1206 Chipfet Rohs Compliant Vishay 57AJ0450
DUAL MOSFET,N/P-CH, 30V, 4A/1206 CHIPFET ROHS COMPLIANT: YES

DUAL MOSFET,N/P-CH, 30V, 4A/1206 CHIPFET ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1096090-SI5504BDC-T1-E3 SI5504BDC-T1-E3 SI5504BDC-T1-E3CT-ND 278-SI5504BDC-T1-E3 SI5504BDC-T1-E3 SI5504BDC-T1-E3 57AJ0450
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5504BDC-T1-E3 FET, MOSFET Arrays FET, MOSFET Arrays P-Channel SMD 30V 4A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Dual Mosfet,n/p-Ch, 30V, 4A/1206 Chipfet Rohs Compliant Vishay
Polarity P-Channel P-Channel; N and P-Channel N-Channel; P-Channel
V(BR)DSS 30 volts 30 volts
PD 3120 to 3100 milliwatts 3100 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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