Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5486DU-T1-GE3 SI5486DU-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 028577-SI5486DU-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PowerPak ChipFet (3x1.9) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 54nC @ 8V Max Input Capacitance: 2100pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 15 mOhm @ 7.7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 028577-SI5486DU-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PowerPak ChipFet (3x1.9) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 54nC @ 8V Max Input Capacitance: 2100pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 15 mOhm @ 7.7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5486DU-T1-GE3 - 028577-SI5486DU-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5486DU-T1-GE3
028577-SI5486DU-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5486DU-T1-GE3 028577-SI5486DU-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028577-SI5486DU-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PowerPak ChipFet (3x1.9) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 54nC @ 8V Max Input Capacitance: 2100pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 15 mOhm @ 7.7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 028577-SI5486DU-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PowerPak ChipFet (3x1.9)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 54nC @ 8V
Max Input Capacitance: 2100pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 15 mOhm @ 7.7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SI5486DU-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI5486DU-T1-GE3
Single FETs, MOSFETs SI5486DU-T1-GE3
MOSFET N-CH 20V 12A CHIPFET

MOSFET N-CH 20V 12A CHIPFET

Supplier's Site Datasheet
Single FETs, MOSFETs - SI5486DU-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI5486DU-T1-GE3TR-ND
Single FETs, MOSFETs SI5486DU-T1-GE3TR-ND
N-Channel 20V 12A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount PowerPAK® ChipFET™ Single

N-Channel 20V 12A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount PowerPAK® ChipFET™ Single

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI5486DU-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI5486DU-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI5486DU-T1-GE3
MOSFET N-CH 20V 12A CHIPFET

MOSFET N-CH 20V 12A CHIPFET

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 028577-SI5486DU-T1-GE3 SI5486DU-T1-GE3 SI5486DU-T1-GE3TR-ND SI5486DU-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5486DU-T1-GE3 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 20 volts 20 volts
PD 3100 to 31000 milliwatts 3100 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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