Manufacturer: Vishay
Win Source Part Number: 064533-SI5480DU-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK ChipFet Single
Dimension: PowerPAK ChipFET Single
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 34nC @ 10V
Max Input Capacitance: 1230pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 7.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
MOSFET N-CH 30V 12A PPAK
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 064533-SI5480DU-T1-GE3 | SI5480DU-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5480DU-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | |
| V(BR)DSS | 30 volts | |
| PD | 3100 to 31000 milliwatts |
