Vishay Intertechnology, Inc. Single FETs, MOSFETs SI5475DC-T1-GE3

P-Channel 12V 5.5A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™

Win Source Part Number: 1277503-SI5475DC-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
Power Dissipation (Max): 1.3W (Ta)
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SI5475
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V