Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5457DC-T1-GE3 SI5457DC-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 143799-SI5457DC-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.3W (Ta), 5.7W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 1.4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 1000pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 36 mOhm @ 4.9A, 4.5V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 143799-SI5457DC-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.3W (Ta), 5.7W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 1.4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 1000pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 36 mOhm @ 4.9A, 4.5V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5457DC-T1-GE3 - 143799-SI5457DC-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5457DC-T1-GE3
143799-SI5457DC-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5457DC-T1-GE3 143799-SI5457DC-T1-GE3
Manufacturer: Vishay Win Source Part Number: 143799-SI5457DC-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.3W (Ta), 5.7W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 1.4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 1000pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 36 mOhm @ 4.9A, 4.5V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 143799-SI5457DC-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.3W (Ta), 5.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1000pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 36 mOhm @ 4.9A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SI5457DC-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI5457DC-T1-GE3CT-ND
Single FETs, MOSFETs SI5457DC-T1-GE3CT-ND
P-Channel 20V 6A (Tc) 5.7W (Tc) Surface Mount 1206-8 ChipFET™

P-Channel 20V 6A (Tc) 5.7W (Tc) Surface Mount 1206-8 ChipFET™

Buy Now Datasheet
Single FETs, MOSFETs - SI5457DC-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI5457DC-T1-GE3TR-ND
Single FETs, MOSFETs SI5457DC-T1-GE3TR-ND
P-Channel 20V 6A (Tc) 5.7W (Tc) Surface Mount 1206-8 ChipFET™

P-Channel 20V 6A (Tc) 5.7W (Tc) Surface Mount 1206-8 ChipFET™

Buy Now Datasheet
Single FETs, MOSFETs - SI5457DC-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI5457DC-T1-GE3DKR-ND
Single FETs, MOSFETs SI5457DC-T1-GE3DKR-ND
P-Channel 20V 6A (Tc) 5.7W (Tc) Surface Mount 1206-8 ChipFET™

P-Channel 20V 6A (Tc) 5.7W (Tc) Surface Mount 1206-8 ChipFET™

Buy Now Datasheet
Single FETs, MOSFETs - SI5457DC-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI5457DC-T1-GE3
Single FETs, MOSFETs SI5457DC-T1-GE3
MOSFET P-CH 20V 6A 1206-8

MOSFET P-CH 20V 6A 1206-8

Supplier's Site Datasheet
Singapore
SMD 20V 6A MOSFET Transistor
278-SI5457DC-T1-GE3
SMD 20V 6A MOSFET Transistor 278-SI5457DC-T1-GE3
P-CH MOSFET 20V 6A 36mR SMD Product overview: SI5457DC-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 20V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5457DC-T1-GE3 can be used for catalog matching and distributor lookup.

P-CH MOSFET 20V 6A 36mR SMD Product overview: SI5457DC-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 20V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5457DC-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET -20V Vds 12V Vgs 1206-8 ChipFET

MOSFET -20V Vds 12V Vgs 1206-8 ChipFET

Buy Now Datasheet
Mosfet, P-Ch, 20V, 6A, 1206 Chipfet Rohs Compliant Vishay - 57AJ0447 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 20V, 6A, 1206 Chipfet Rohs Compliant Vishay
57AJ0447
Mosfet, P-Ch, 20V, 6A, 1206 Chipfet Rohs Compliant Vishay 57AJ0447
MOSFET, P-CH, 20V, 6A, 1206 CHIPFET ROHS COMPLIANT: YES

MOSFET, P-CH, 20V, 6A, 1206 CHIPFET ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI5457DC-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI5457DC-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI5457DC-T1-GE3
MOSFET P-CH 20V 6A 1206-8

MOSFET P-CH 20V 6A 1206-8

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 143799-SI5457DC-T1-GE3 SI5457DC-T1-GE3CT-ND SI5457DC-T1-GE3 278-SI5457DC-T1-GE3 SI5457DC-T1-GE3 57AJ0447 SI5457DC-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5457DC-T1-GE3 Single FETs, MOSFETs Single FETs, MOSFETs SMD 20V 6A MOSFET Transistor MOSFET Mosfet, P-Ch, 20V, 6A, 1206 Chipfet Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS 20 volts 20 volts
PD 2300 to 5700 milliwatts 5700 milliwatts 5700 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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