Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5447DC-T1-E3 SI5447DC-T1-E3

Manufacturer: Vishay Win Source Part Number: 116100-SI5447DC-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.5A (Ta) Gate-Source Threshold Voltage: 450mV @ 250μA (Min) Max Gate Charge: 10nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 76 mOhm @ 3.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance