Manufacturer: Vishay Siliconix
Win Source Part Number: 716201-SI5445BDC-T1-
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 1206-8 ChipFET
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-SMD, Flat Lead
Power Dissipation (Maximum): 1.3W
Popularity: Low
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 8V
Id - Continuous Drain Current: 5.2A
Rds On (Maximum) at Id, Vgs: 33mOhm at 5.2A, 4.5V
Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 21nC at 4.5V
Gate Source Voltage (Maximum): ±8V
TRANSISTOR 5200 mA, 8 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1206-8, CHIPFET-8, FET General Purpose Small Signal Product overview: SI5445BDC-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 5200 mA, 8 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 5200 mA, 8 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5445BDC-T1-GE3
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 716201-SI5445BDC-T1-GE3 | 278-SI5445BDC-T1-GE3 |
| Product Name | FETs - Single - SI5445BDC-T1-GE3 | P-Channel 5200 mA 8 V MOSFET Transistor |
| Polarity | P-Channel; P-Channel | P-Channel |
| V(BR)DSS | 8 volts | |
| PD | 1300 milliwatts | 1300 milliwatts |