Vishay Intertechnology, Inc. FETs - Single - SI5445BDC-T1-GE3 SI5445BDC-T1-GE3

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 716201-SI5445BDC-T1- GE3 Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 1206-8 ChipFET Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-SMD, Flat Lead Power Dissipation (Maximum): 1.3W Popularity: Low Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 8V Id - Continuous Drain Current: 5.2A Rds On (Maximum) at Id, Vgs: 33mOhm at 5.2A, 4.5V Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 21nC at 4.5V Gate Source Voltage (Maximum): ±8V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 716201-SI5445BDC-T1- GE3 Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 1206-8 ChipFET Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-SMD, Flat Lead Power Dissipation (Maximum): 1.3W Popularity: Low Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 8V Id - Continuous Drain Current: 5.2A Rds On (Maximum) at Id, Vgs: 33mOhm at 5.2A, 4.5V Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 21nC at 4.5V Gate Source Voltage (Maximum): ±8V
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FETs - Single - SI5445BDC-T1-GE3 - 716201-SI5445BDC-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - SI5445BDC-T1-GE3
716201-SI5445BDC-T1-GE3
FETs - Single - SI5445BDC-T1-GE3 716201-SI5445BDC-T1-GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 716201-SI5445BDC-T1- GE3 Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 1206-8 ChipFET Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-SMD, Flat Lead Power Dissipation (Maximum): 1.3W Popularity: Low Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 8V Id - Continuous Drain Current: 5.2A Rds On (Maximum) at Id, Vgs: 33mOhm at 5.2A, 4.5V Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 21nC at 4.5V Gate Source Voltage (Maximum): ±8V

Manufacturer: Vishay Siliconix
Win Source Part Number: 716201-SI5445BDC-T1-GE3
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 1206-8 ChipFET
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-SMD, Flat Lead
Power Dissipation (Maximum): 1.3W
Popularity: Low
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 8V
Id - Continuous Drain Current: 5.2A
Rds On (Maximum) at Id, Vgs: 33mOhm at 5.2A, 4.5V
Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 21nC at 4.5V
Gate Source Voltage (Maximum): ±8V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 716201-SI5445BDC-T1-GE3
Product Name FETs - Single - SI5445BDC-T1-GE3
Polarity P-Channel; P-Channel
V(BR)DSS 8 volts
PD 1300 milliwatts
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