Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5445BDC-T1-E3 SI5445BDC-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 100613-SI5445BDC-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 5.2A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 21nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 33 mOhm @ 5.2A, 4.5V Alternative Parts (Cross-Reference): NTHS5445T1; NTHS2101P; NTHS2101PT1G; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 100613-SI5445BDC-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 5.2A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 21nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 33 mOhm @ 5.2A, 4.5V Alternative Parts (Cross-Reference): NTHS5445T1; NTHS2101P; NTHS2101PT1G; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5445BDC-T1-E3 - 100613-SI5445BDC-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5445BDC-T1-E3
100613-SI5445BDC-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5445BDC-T1-E3 100613-SI5445BDC-T1-E3
Manufacturer: Vishay Win Source Part Number: 100613-SI5445BDC-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 5.2A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 21nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 33 mOhm @ 5.2A, 4.5V Alternative Parts (Cross-Reference): NTHS5445T1; NTHS2101P; NTHS2101PT1G; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 100613-SI5445BDC-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 5.2A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 21nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 33 mOhm @ 5.2A, 4.5V
Alternative Parts (Cross-Reference): NTHS5445T1; NTHS2101P; NTHS2101PT1G;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - SI5445BDC-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI5445BDC-T1-E3TR-ND
Single FETs, MOSFETs SI5445BDC-T1-E3TR-ND
P-Channel 8V 5.2A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™

P-Channel 8V 5.2A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™

Buy Now Datasheet
Singapore
SMD 8V 5.2A MOSFET Transistor
278-SI5445BDC-T1-E3
SMD 8V 5.2A MOSFET Transistor 278-SI5445BDC-T1-E3
P-CH JFET 8V 5.2A 33mR SMD Product overview: SI5445BDC-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 8V, 5.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 8V, 5.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5445BDC-T1-E3 can be used for catalog matching and distributor lookup.

P-CH JFET 8V 5.2A 33mR SMD Product overview: SI5445BDC-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 8V, 5.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 8V, 5.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5445BDC-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI5445BDC-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI5445BDC-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI5445BDC-T1-E3
MOSFET P-CH 8V 5.2A 1206-8

MOSFET P-CH 8V 5.2A 1206-8

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 100613-SI5445BDC-T1-E3 SI5445BDC-T1-E3TR-ND 278-SI5445BDC-T1-E3 SI5445BDC-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5445BDC-T1-E3 Single FETs, MOSFETs SMD 8V 5.2A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 8 volts
PD 1300 milliwatts 1300 milliwatts
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