Vishay Intertechnology, Inc. Single FETs, MOSFETs SI5445BDC-T1-E3

Description
P-Channel 8V 5.2A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™
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Description
P-Channel 8V 5.2A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™
Request a Quote Datasheet

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Description
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Single FETs, MOSFETs - SI5445BDC-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI5445BDC-T1-E3TR-ND
Single FETs, MOSFETs SI5445BDC-T1-E3TR-ND
P-Channel 8V 5.2A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™

P-Channel 8V 5.2A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5445BDC-T1-E3 - 100613-SI5445BDC-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5445BDC-T1-E3
100613-SI5445BDC-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5445BDC-T1-E3 100613-SI5445BDC-T1-E3
Manufacturer: Vishay Win Source Part Number: 100613-SI5445BDC-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 5.2A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 21nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 33 mOhm @ 5.2A, 4.5V Alternative Parts (Cross-Reference): NTHS5445T1; NTHS2101P; NTHS2101PT1G; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 100613-SI5445BDC-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 5.2A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 21nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 33 mOhm @ 5.2A, 4.5V
Alternative Parts (Cross-Reference): NTHS5445T1; NTHS2101P; NTHS2101PT1G;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI5445BDC-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI5445BDC-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI5445BDC-T1-E3
MOSFET P-CH 8V 5.2A 1206-8

MOSFET P-CH 8V 5.2A 1206-8

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI5445BDC-T1-E3TR-ND 100613-SI5445BDC-T1-E3 SI5445BDC-T1-E3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5445BDC-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type 8-SMD, Flat Leads SOT3; 1206-8 ChipFET
V(BR)DSS 8 volts
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