The 999430-SI5442DU-T1-GE3 is an N-Channel MOSFET designed for applications requiring efficient power management, such as load switches and DC/DC converters. It features a maximum drain-source voltage of 20 V and a continuous drain current rating of 25 A at 25 ¬8C. The device is housed in a PowerPAK ChipFET package, which offers a small footprint and low on-resistance, with a maximum Rds(on) of 10 mOc at 8 A and a gate-source threshold voltage ranging from 0.4 V to 0.9 V. The MOSFET operates effectively across a temperature range of -55 ¬8C to 150 ¬8C and supports a maximum power dissipation of 31 W under specific conditions. It has a total gate charge of 45 nC at 8 V, making it suitable for high-speed switching applications. The device is also compliant with lead-free and halogen-free standards, ensuring it meets modern environmental regulations. Engineers considering this MOSFET for their projects should evaluate its specifications against their application requirements, particularly in terms of voltage, current, and thermal performance.
MOSFET N-CH 20V 25A PPAK CHIPFET Product overview: SI5442DU-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 25A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 25A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5442DU-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 20V 25A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount PowerPAK® ChipFet Single
N-Channel 20V 25A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount PowerPAK® ChipFet Single
N-Channel 20V 25A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount PowerPAK® ChipFet Single
N-Ch PPAK ChipFET 20V 10mohm @ 4.5V
N-Ch PPAK ChipFET 20V 10mohm @ 4.5V
N-Ch PPAK ChipFET 20V 10mohm @ 4.5V
MOSFET N-CH 20V 25A PPAK
Win Source Part Number: 999430-SI5442DU-T1-G
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Package / Case: PowerPAK® ChipFET™ Single
Supplier Device Package: PowerPAK® ChipFet Single
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 78 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SI5442DU-T1-GE3TR,SI
Base Product Number: SI5442
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
MOSFET 20V Vds 8V Vgs PowerPAK ChipFET
MOSFET N-CH 20V 25A PPAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI5442DU-T1-GE3 | SI5442DU-T1-GE3CT-ND | 2567364 | SI5442DU-T1-GE3 | 999430-SI5442DU-T1-GE3 | SI5442DU-T1-GE3 | SI5442DU-T1-GE3 |
| Product Name | 20V 25A MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 31000 milliwatts | 3100 milliwatts | 3100 to 31000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | PowerPAK® ChipFET™ Single | PowerPAK ChipFET | PowerPAK® ChipFET™ Single | SOT3 | PowerPAKR ChipFETTM Single |
