MOSFET P-CH 20V 4.4A 1206-8
P-Channel 20V 4.4A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™
P-Channel 20V 4.4A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™
P-Channel 20V 4.4A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™
Manufacturer: Vishay
Win Source Part Number: 1096085-SI5441BDC-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.4A (Ta)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 22nC @ 4.5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 45 mOhm @ 4.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
P CHANNEL MOSFET, -20V, 61A, 1206; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:8V; Gate Source Threshold Voltage Max:12V RoHS Compliant: Yes
MOSFET 20V 6.1A 2.5W 45mohm @ 4.5V
MOSFET P-CH 20V 4.4A 1206-8
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI5441BDC-T1-GE3 | SI5441BDC-T1-GE3TR-ND | 1096085-SI5441BDC-T1-GE3 | 16P3774 | SI5441BDC-T1-GE3 | SI5441BDC-T1-GE3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5441BDC-T1-GE3 | P Channel Mosfet, -20V, 61A, 1206; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 20 volts | 20 volts | ||||
| IDSS | 4400 milliamps | 6100 milliamps |
