MOSFET P-CH 20V 4.4A 1206-8 Product overview: SI5441BDC-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.4A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI5441BDC-T1-GE
P-Channel 20V 4.4A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™
Manufacturer: Vishay
Win Source Part Number: 1096085-SI5441BDC-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.4A (Ta)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 22nC @ 4.5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 45 mOhm @ 4.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
MOSFET 20V 6.1A 2.5W 45mohm @ 4.5V
MOSFET P-CH 20V 4.4A 1206-8
MOSFET P-CH 20V 4.4A 1206-8
P CHANNEL MOSFET, -20V, 61A, 1206; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:8V; Gate Source Threshold Voltage Max:12V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-SI5441BDC-T1-GE3 | SI5441BDC-T1-GE3TR-ND | 1096085-SI5441BDC-T1-GE3 | SI5441BDC-T1-GE3 | SI5441BDC-T1-GE3 | SI5441BDC-T1-GE3 | 16P3774 |
| Product Name | 20V 4.4A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5441BDC-T1-GE3 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | P Channel Mosfet, -20V, 61A, 1206; Channel Type Vishay |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | ||
| PD | 1300 milliwatts | 1300 milliwatts | 1300 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | 8-SMD, Flat Leads | SOT3; 1206-8 ChipFET | Surface Mount | 8-SMD, Flat Lead | TO-3 |
