Vishay Precision Group Single FETs, MOSFETs SI5441BDC-T1-GE3

Description
P-Channel 20V 4.4A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™
Request a Quote Datasheet
Description
P-Channel 20V 4.4A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI5441BDC-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI5441BDC-T1-GE3TR-ND
Single FETs, MOSFETs SI5441BDC-T1-GE3TR-ND
P-Channel 20V 4.4A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™

P-Channel 20V 4.4A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™

Buy Now Datasheet
Single FETs, MOSFETs - SI5441BDC-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI5441BDC-T1-GE3CT-ND
Single FETs, MOSFETs SI5441BDC-T1-GE3CT-ND
P-Channel 20V 4.4A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™

P-Channel 20V 4.4A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™

Buy Now Datasheet
Single FETs, MOSFETs - SI5441BDC-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI5441BDC-T1-GE3DKR-ND
Single FETs, MOSFETs SI5441BDC-T1-GE3DKR-ND
P-Channel 20V 4.4A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™

P-Channel 20V 4.4A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™

Buy Now Datasheet
Single FETs, MOSFETs - SI5441BDC-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI5441BDC-T1-GE3
Single FETs, MOSFETs SI5441BDC-T1-GE3
MOSFET P-CH 20V 4.4A 1206-8

MOSFET P-CH 20V 4.4A 1206-8

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5441BDC-T1-GE3 - 1096085-SI5441BDC-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5441BDC-T1-GE3
1096085-SI5441BDC-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5441BDC-T1-GE3 1096085-SI5441BDC-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096085-SI5441BDC-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.4A (Ta) Gate-Source Threshold Voltage: 1.4V @ 250μA Max Gate Charge: 22nC @ 4.5V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 45 mOhm @ 4.4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096085-SI5441BDC-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.4A (Ta)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 22nC @ 4.5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 45 mOhm @ 4.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI5441BDC-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI5441BDC-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI5441BDC-T1-GE3
MOSFET P-CH 20V 4.4A 1206-8

MOSFET P-CH 20V 4.4A 1206-8

Supplier's Site
P Channel Mosfet, -20V, 61A, 1206; Channel Type Vishay - 16P3774 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -20V, 61A, 1206; Channel Type Vishay
16P3774
P Channel Mosfet, -20V, 61A, 1206; Channel Type Vishay 16P3774
P CHANNEL MOSFET, -20V, 61A, 1206; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:8V; Gate Source Threshold Voltage Max:12V RoHS Compliant: Yes

P CHANNEL MOSFET, -20V, 61A, 1206; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:8V; Gate Source Threshold Voltage Max:12V RoHS Compliant: Yes

Supplier's Site
MOSFET 20V 6.1A 2.5W 45mohm @ 4.5V

MOSFET 20V 6.1A 2.5W 45mohm @ 4.5V

Buy Now Datasheet

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI5441BDC-T1-GE3TR-ND SI5441BDC-T1-GE3 1096085-SI5441BDC-T1-GE3 SI5441BDC-T1-GE3 16P3774 SI5441BDC-T1-GE3
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5441BDC-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs P Channel Mosfet, -20V, 61A, 1206; Channel Type Vishay MOSFET
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel P-Channel
Package Type 8-SMD, Flat Leads 8-SMD, Flat Lead SOT3; 1206-8 ChipFET Surface Mount TO-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
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