Vishay Intertechnology, Inc. Single FETs, MOSFETs SI5441BDC-T1-E3

Description
P-Channel 20V 4.4A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™
Request a Quote Datasheet
Description
P-Channel 20V 4.4A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI5441BDC-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI5441BDC-T1-E3DKR-ND
Single FETs, MOSFETs SI5441BDC-T1-E3DKR-ND
P-Channel 20V 4.4A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™

P-Channel 20V 4.4A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™

Buy Now Datasheet
Single FETs, MOSFETs - SI5441BDC-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI5441BDC-T1-E3CT-ND
Single FETs, MOSFETs SI5441BDC-T1-E3CT-ND
P-Channel 20V 4.4A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™

P-Channel 20V 4.4A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™

Buy Now Datasheet
Single FETs, MOSFETs - SI5441BDC-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI5441BDC-T1-E3TR-ND
Single FETs, MOSFETs SI5441BDC-T1-E3TR-ND
P-Channel 20V 4.4A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™

P-Channel 20V 4.4A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5441BDC-T1-E3 - 098329-SI5441BDC-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5441BDC-T1-E3
098329-SI5441BDC-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5441BDC-T1-E3 098329-SI5441BDC-T1-E3
Manufacturer: Vishay Win Source Part Number: 098329-SI5441BDC-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.4A (Ta) Gate-Source Threshold Voltage: 1.4V @ 250μA Max Gate Charge: 22nC @ 4.5V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 45 mOhm @ 4.4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 098329-SI5441BDC-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.4A (Ta)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 22nC @ 4.5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 45 mOhm @ 4.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - SI5441BDC-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI5441BDC-T1-E3
Single FETs, MOSFETs SI5441BDC-T1-E3
MOSFET P-CH 20V 4.4A 1206-8

MOSFET P-CH 20V 4.4A 1206-8

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 20V 6.1A 2.5W 45mohm @ 4.5V

MOSFET 20V 6.1A 2.5W 45mohm @ 4.5V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI5441BDC-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI5441BDC-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI5441BDC-T1-E3
MOSFET P-CH 20V 4.4A 1206-8

MOSFET P-CH 20V 4.4A 1206-8

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI5441BDC-T1-E3DKR-ND 098329-SI5441BDC-T1-E3 SI5441BDC-T1-E3 SI5441BDC-T1-E3 SI5441BDC-T1-E3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5441BDC-T1-E3 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel
Package Type 8-SMD, Flat Leads SOT3; 1206-8 ChipFET 8-SMD, Flat Lead 1206-8 ChipFETTM
V(BR)DSS 20 volts 20 volts
PD 1300 milliwatts 1300 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2N5550TFR - 854974-2N5550TFR - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
DC-6 GHz, 40 Watt, 50 Volt GaN RF Power Transistor - QPD1035 - Qorvo
Specs
Transistor Technology / Material DC-6 GHz, 40 Watt, 50 Volt GaN RF Power Transistor
Transistor Grade / Operating Range Military
Package Type NI-200
View Details
2 suppliers