Vishay Intertechnology, Inc. Single FETs, MOSFETs SI5433BDC-T1-E3

Description
P-Channel 20V 4.8A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™
Request a Quote Datasheet
Description
P-Channel 20V 4.8A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI5433BDC-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI5433BDC-T1-E3TR-ND
Single FETs, MOSFETs SI5433BDC-T1-E3TR-ND
P-Channel 20V 4.8A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™

P-Channel 20V 4.8A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5433BDC-T1-E3 - 101290-SI5433BDC-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5433BDC-T1-E3
101290-SI5433BDC-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5433BDC-T1-E3 101290-SI5433BDC-T1-E3
Manufacturer: Vishay Win Source Part Number: 101290-SI5433BDC-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.8A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 22nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 37 mOhm @ 4.8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 101290-SI5433BDC-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.8A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 22nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 37 mOhm @ 4.8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI5433BDC-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI5433BDC-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI5433BDC-T1-E3
MOSFET P-CH 20V 4.8A 1206-8

MOSFET P-CH 20V 4.8A 1206-8

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI5433BDC-T1-E3TR-ND 101290-SI5433BDC-T1-E3 SI5433BDC-T1-E3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5433BDC-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type 8-SMD, Flat Leads SOT3; 1206-8 ChipFET
V(BR)DSS 20 volts
Unlock Full Specs
to access all available technical data