The Vishay Si5419DU is a P-channel MOSFET transistor designed for applications requiring a maximum drain-source voltage of -30 V and a continuous drain current of -12 A. It features a low on-resistance of 0.020 Ohm at a gate-source voltage of -10 V, making it suitable for efficient power management. The device has a total gate charge of 15.5 nC, which contributes to its fast switching capabilities. It operates within a temperature range of -55 to 150 ¬8C and is compliant with RoHS standards. The transistor is housed in a thermally enhanced PowerPAK ChipFET package, which offers a compact footprint and a thin profile of 0.8 mm. This product is ideal for load switch applications and is halogen-free according to IEC standards.
Manufacturer: Vishay
Win Source Part Number: 1096084-SI5429DU-T1-
Packaging: Cut Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK ChipFet Dual
Dimension: PowerPAK ChipFET Dual
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 2320pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 15 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Sufficient
MOSFET P-CH 30V 12A PWR PK
P-Channel MOSFET, -30V, 12A, 15mR, Surface Mount Product overview: SI5429DU-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, -30V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -30V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5429DU-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET Transistor, P Channel, 12 A, -30 V, 0.0122 ohm, -10 V, -1 V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1096084-SI5429DU-T1-GE3 | SI5429DU-T1-GE3TR-ND | 278-SI5429DU-T1-GE3 | 63W4146 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5429DU-T1-GE3 | Single FETs, MOSFETs | P-Channel SMD -30V 12A MOSFET Transistor | Mosfet Transistor, P Channel, 12 A, -30 V, 0.0122 Ohm, -10 V, -1 V Rohs Compliant Vishay |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel |
| V(BR)DSS | 30 volts | |||
| PD | 3100 to 31000 milliwatts | 31000 milliwatts |
