The SI5415AEDU-T1-GE3 is a P-Channel MOSFET designed for applications requiring a maximum drain-source voltage of -20 V and a continuous drain current of -25 A at a case temperature of 25 ¬8C. It features a low on-resistance of 0.0096 Oc at a gate-source voltage of -4.5 V, making it suitable for efficient power management in portable devices such as smartphones and tablet PCs. The device is housed in a PowerPAK ChipFET package, which offers a compact footprint and enhanced thermal performance. It has a maximum power dissipation of 31 W at 25 ¬8C and operates within a temperature range of -50 ¬8C to 150 ¬8C. The MOSFET also provides robust ESD protection rated at 5500 V (HBM) and is compliant with lead-free and halogen-free standards. This component is ideal for battery and load switching applications.
Manufacturer: Vishay
Win Source Part Number: 894720-SI5415AEDU-T1
Series: TrenchFET®
Operating Temperature Range: -50°C ~ 150°C (TJ)
Features: P-Channel 20 V 25A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount PowerPAK® ChipFet Single
Package: Reel - TR
Package: PowerPAK® ChipFET™ Single
Mounting: Surface Mount
Part Status: Obsolete
Family Name: SI5415
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® ChipFet Single
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: SI5415AEDU-T1-GE3DKR
MOSFET P-CH 20V 25A PPAK Product overview: SI5415AEDU-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 25A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 25A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5415AEDU-T1-GE
P-Channel 20V 25A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount PowerPAK® ChipFet Single
MOSFET P-CH 20V 25A PPAK
MOSFET RECOMMENDED ALT 781-SI5419DU-GE3
MOSFET P-CH 20V 25A PPAK
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 894720-SI5415AEDU-T1-GE3 | 278-SI5415AEDU-T1-GE3 | SI5415AEDU-T1-GE3TR-ND | SI5415AEDU-T1-GE3 | SI5415AEDU-T1-GE3 | SI5415AEDU-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5415AEDU-T1-GE3 | 20V 25A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | |||
| TJ | -50 to 150 C (-58 to 302 F) | -50 to 150 C (-58 to 302 F) | -50 to 150 C (-58 to 302 F) | |||
| Package Type | SOT3; PowerPAK® ChipFet Single | Tape & Reel (TR) | PowerPAK® ChipFET™ Single | 4300 pF @ 10 V | PowerPAK® ChipFET™ Single | |
| PD | 3100 milliwatts | 3100 milliwatts |
