Vishay Intertechnology, Inc. Single FETs, MOSFETs SI5404BDC-T1-GE3

Description
N-Channel 20V 5.4A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™
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Description
N-Channel 20V 5.4A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - SI5404BDC-T1-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI5404BDC-T1-GE3-ND
Single FETs, MOSFETs SI5404BDC-T1-GE3-ND
N-Channel 20V 5.4A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™

N-Channel 20V 5.4A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™

Buy Now Datasheet
FETs - Single - SI5404BDC-T1-GE3 - 810410-SI5404BDC-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - SI5404BDC-T1-GE3
810410-SI5404BDC-T1-GE3
FETs - Single - SI5404BDC-T1-GE3 810410-SI5404BDC-T1-GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 810410-SI5404BDC-T1- GE3 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 20V Part Status: Obsolete (End Of Life) Supplier Device Package: 1206-8 ChipFET Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-SMD, Flat Lead Power Dissipation (Maximum): 1.3W Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 28mOhm at 5.4A, 4.5V Gate Charge (Qg) (Maximum) at Vgs: 11nC at 4.5V Current - Continuous Drain (Id) at 25°C: 5.4A Vgs(th) (Maximum) at Id: 1.5V at 250μA Maximum Vgs: ±12V

Manufacturer: Vishay Siliconix
Win Source Part Number: 810410-SI5404BDC-T1-GE3
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20V
Part Status: Obsolete (End Of Life)
Supplier Device Package: 1206-8 ChipFET
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-SMD, Flat Lead
Power Dissipation (Maximum): 1.3W
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 28mOhm at 5.4A, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 11nC at 4.5V
Current - Continuous Drain (Id) at 25°C: 5.4A
Vgs(th) (Maximum) at Id: 1.5V at 250μA
Maximum Vgs: ±12V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI5404BDC-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI5404BDC-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI5404BDC-T1-GE3
MOSFET N-CH 20V 5.4A 1206-8

MOSFET N-CH 20V 5.4A 1206-8

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI5404BDC-T1-GE3-ND 810410-SI5404BDC-T1-GE3 SI5404BDC-T1-GE3
Product Name Single FETs, MOSFETs FETs - Single - SI5404BDC-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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