Manufacturer: Vishay
Win Source Part Number: 028569-SI5403DC-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
Family Name: Si5403DC
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 1340pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 30 mOhm @ 7.2A, 10V
Alternative Parts (Cross-Reference): TPCF8104(TE85L,F,M; TPCF8104(TE85L); TPCF8104(TE85L,F);
Introduction Date: July 29, 2008
ECCN: EAR99
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
MOSFET P-CH 30V 6A 1206-8
P-Channel 30V 6A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 1206-8 ChipFET™
P-Channel 30V 6A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 1206-8 ChipFET™
P-Channel 30V 6A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 1206-8 ChipFET™
MOSFET P-CH 30V 6A 1206-8
MOSFET, P-CH, -30V, 6A, CHIFFET; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Product Range:-RoHS Compliant: Yes
P CHANNEL MOSFET, -30V, 6A, 1206, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET -30V Vds 20V Vgs 1206-8 ChipFET
MOSFET P-CH 30V 6A 1206-8
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028569-SI5403DC-T1-GE3 | SI5403DC-T1-GE3 | SI5403DC-T1-GE3CT-ND | SI5403DC-T1-GE3 | 70AC6510 | 16P3766 | SI5403DC-T1-GE3 | 880-SI5403DC-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5403DC-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -30V, 6A, Chiffet; Channel Type Vishay | P Channel Mosfet, -30V, 6A, 1206, Full Reel; Channel Type Vishay | MOSFET | MOSFET P-CH 30V 6A 1206-8 |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| PD | 2500 to 6300 milliwatts | 2500 milliwatts | 2500 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; 1206-8 ChipFET | 8-SMD, Flat Lead | 8-SMD, Flat Leads | 8-SMD, Flat Lead | TO-3 | TO-3 |
