Vishay Precision Group Single FETs, MOSFETs SI5403DC-T1-GE3

Description
MOSFET P-CH 30V 6A 1206-8
Request a Quote Datasheet
Description
MOSFET P-CH 30V 6A 1206-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI5403DC-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI5403DC-T1-GE3
Single FETs, MOSFETs SI5403DC-T1-GE3
MOSFET P-CH 30V 6A 1206-8

MOSFET P-CH 30V 6A 1206-8

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5403DC-T1-GE3 - 028569-SI5403DC-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5403DC-T1-GE3
028569-SI5403DC-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5403DC-T1-GE3 028569-SI5403DC-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028569-SI5403DC-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc) Family Name: Si5403DC Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 1340pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 30 mOhm @ 7.2A, 10V Alternative Parts (Cross-Reference): TPCF8104(TE85L,F,M; TPCF8104(TE85L); TPCF8104(TE85L,F); Introduction Date: July 29, 2008 ECCN: EAR99 Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 028569-SI5403DC-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
Family Name: Si5403DC
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 1340pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 30 mOhm @ 7.2A, 10V
Alternative Parts (Cross-Reference): TPCF8104(TE85L,F,M; TPCF8104(TE85L); TPCF8104(TE85L,F);
Introduction Date: July 29, 2008
ECCN: EAR99
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SI5403DC-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI5403DC-T1-GE3CT-ND
Single FETs, MOSFETs SI5403DC-T1-GE3CT-ND
P-Channel 30V 6A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 1206-8 ChipFET™

P-Channel 30V 6A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 1206-8 ChipFET™

Buy Now Datasheet
Single FETs, MOSFETs - SI5403DC-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI5403DC-T1-GE3TR-ND
Single FETs, MOSFETs SI5403DC-T1-GE3TR-ND
P-Channel 30V 6A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 1206-8 ChipFET™

P-Channel 30V 6A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 1206-8 ChipFET™

Buy Now Datasheet
Single FETs, MOSFETs - SI5403DC-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI5403DC-T1-GE3DKR-ND
Single FETs, MOSFETs SI5403DC-T1-GE3DKR-ND
P-Channel 30V 6A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 1206-8 ChipFET™

P-Channel 30V 6A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 1206-8 ChipFET™

Buy Now Datasheet
Singapore
SMD 30V 6A MOSFET Transistor
278-SI5403DC-T1-GE3
SMD 30V 6A MOSFET Transistor 278-SI5403DC-T1-GE3
P-CH MOSFET 30V 6A 30mR SMD Product overview: SI5403DC-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5403DC-T1-GE3 can be used for catalog matching and distributor lookup.

P-CH MOSFET 30V 6A 30mR SMD Product overview: SI5403DC-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5403DC-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET -30V Vds 20V Vgs 1206-8 ChipFET

MOSFET -30V Vds 20V Vgs 1206-8 ChipFET

Buy Now Datasheet
Mosfet, P-Ch, -30V, 6A, Chiffet; Channel Type Vishay - 70AC6510 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -30V, 6A, Chiffet; Channel Type Vishay
70AC6510
Mosfet, P-Ch, -30V, 6A, Chiffet; Channel Type Vishay 70AC6510
MOSFET, P-CH, -30V, 6A, CHIFFET; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Product Range:-RoHS Compliant: Yes

MOSFET, P-CH, -30V, 6A, CHIFFET; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Product Range:-RoHS Compliant: Yes

Supplier's Site
P Channel Mosfet, -30V, 6A, 1206, Full Reel; Channel Type Vishay - 16P3766 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -30V, 6A, 1206, Full Reel; Channel Type Vishay
16P3766
P Channel Mosfet, -30V, 6A, 1206, Full Reel; Channel Type Vishay 16P3766
P CHANNEL MOSFET, -30V, 6A, 1206, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

P CHANNEL MOSFET, -30V, 6A, 1206, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site Datasheet
MOSFET P-CH 30V 6A 1206-8 - 880-SI5403DC-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 30V 6A 1206-8
880-SI5403DC-T1-GE3
MOSFET P-CH 30V 6A 1206-8 880-SI5403DC-T1-GE3
MOSFET P-CH 30V 6A 1206-8

MOSFET P-CH 30V 6A 1206-8

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI5403DC-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI5403DC-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI5403DC-T1-GE3
MOSFET P-CH 30V 6A 1206-8

MOSFET P-CH 30V 6A 1206-8

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI5403DC-T1-GE3 028569-SI5403DC-T1-GE3 SI5403DC-T1-GE3CT-ND 278-SI5403DC-T1-GE3 SI5403DC-T1-GE3 70AC6510 16P3766 880-SI5403DC-T1-GE3 SI5403DC-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5403DC-T1-GE3 Single FETs, MOSFETs SMD 30V 6A MOSFET Transistor MOSFET Mosfet, P-Ch, -30V, 6A, Chiffet; Channel Type Vishay P Channel Mosfet, -30V, 6A, 1206, Full Reel; Channel Type Vishay MOSFET P-CH 30V 6A 1206-8 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 30 volts 30 volts 30 volts
IDSS 6000 milliamps 6000 milliamps 6000 milliamps
PD 2500 milliwatts 2500 to 6300 milliwatts 6300 milliwatts 2500 milliwatts
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