Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4963BDY-T1-E3 SI4963BDY-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 028564-SI4963BDY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.9A Gate-Source Threshold Voltage: 1.4V @ 250μA Max Gate Charge: 21nC @ 4.5V Maximum Rds On at Id,Vgs: 32 mOhm @ 6.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 028564-SI4963BDY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.9A Gate-Source Threshold Voltage: 1.4V @ 250μA Max Gate Charge: 21nC @ 4.5V Maximum Rds On at Id,Vgs: 32 mOhm @ 6.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4963BDY-T1-E3 - 028564-SI4963BDY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4963BDY-T1-E3
028564-SI4963BDY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4963BDY-T1-E3 028564-SI4963BDY-T1-E3
Manufacturer: Vishay Win Source Part Number: 028564-SI4963BDY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.9A Gate-Source Threshold Voltage: 1.4V @ 250μA Max Gate Charge: 21nC @ 4.5V Maximum Rds On at Id,Vgs: 32 mOhm @ 6.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 028564-SI4963BDY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.9A
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 21nC @ 4.5V
Maximum Rds On at Id,Vgs: 32 mOhm @ 6.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore, Singapore
20V 4.9A SOIC MOSFET Transistor
278-SI4963BDY-T1-E3
20V 4.9A SOIC MOSFET Transistor 278-SI4963BDY-T1-E3
Trans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R Product overview: SI4963BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.9A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.9A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4963BDY-T1-E3 can be used for catalog matching and distributor lookup.

Trans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R Product overview: SI4963BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.9A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.9A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4963BDY-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - SI4963BDY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI4963BDY-T1-E3TR-ND
FET, MOSFET Arrays SI4963BDY-T1-E3TR-ND
Mosfet Array 2 P-Channel (Dual) 20V 4.9A 1.1W Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 20V 4.9A 1.1W Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - SI4963BDY-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI4963BDY-T1-E3DKR-ND
FET, MOSFET Arrays SI4963BDY-T1-E3DKR-ND
Mosfet Array 2 P-Channel (Dual) 20V 4.9A 1.1W Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 20V 4.9A 1.1W Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - SI4963BDY-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI4963BDY-T1-E3CT-ND
FET, MOSFET Arrays SI4963BDY-T1-E3CT-ND
Mosfet Array 2 P-Channel (Dual) 20V 4.9A 1.1W Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 20V 4.9A 1.1W Surface Mount 8-SOIC

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 20V 6.2A 2W

MOSFET 20V 6.2A 2W

Buy Now Datasheet
Transistor - 22271524 - Radwell International
Willingboro, NJ, United States
Transistor
22271524
Transistor 22271524
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 4.9A I(D), 20V, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOP-8. FREE 2 YEAR RADWELL WARRANTY

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 4.9A I(D), 20V, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOP-8. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4963BDY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4963BDY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4963BDY-T1-E3
MOSFET 2P-CH 20V 4.9A 8SOIC

MOSFET 2P-CH 20V 4.9A 8SOIC

Supplier's Site
FET, MOSFET Arrays - SI4963BDY-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI4963BDY-T1-E3
FET, MOSFET Arrays SI4963BDY-T1-E3
MOSFET 2P-CH 20V 4.9A 8-SOIC

MOSFET 2P-CH 20V 4.9A 8-SOIC

Supplier's Site Datasheet
Dual Mosfet, Dual P Channel, -4.9 A, -20 V, 0.025 Ohm, -2.5 V, -1.4 V Rohs Compliant Vishay - 97W2665 - Newark, An Avnet Company
Chicago, IL, United States
Dual Mosfet, Dual P Channel, -4.9 A, -20 V, 0.025 Ohm, -2.5 V, -1.4 V Rohs Compliant Vishay
97W2665
Dual Mosfet, Dual P Channel, -4.9 A, -20 V, 0.025 Ohm, -2.5 V, -1.4 V Rohs Compliant Vishay 97W2665
Dual MOSFET, Dual P Channel, -4.9 A, -20 V, 0.025 ohm, -2.5 V, -1.4 V RoHS Compliant: Yes

Dual MOSFET, Dual P Channel, -4.9 A, -20 V, 0.025 ohm, -2.5 V, -1.4 V RoHS Compliant: Yes

Supplier's Site Datasheet
Dual P Channel Mosfet, -20V, Soic, Full Reel; Transistor Polarity Vishay - 57J5690 - Newark, An Avnet Company
Chicago, IL, United States
Dual P Channel Mosfet, -20V, Soic, Full Reel; Transistor Polarity Vishay
57J5690
Dual P Channel Mosfet, -20V, Soic, Full Reel; Transistor Polarity Vishay 57J5690
DUAL P CHANNEL MOSFET, -20V, SOIC, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.5A; On Resistance Rds(on):0.025ohm; Transistor Mounting:Surface Mount; Power Dissipation Pd:1.1WRoHS Compliant: Yes

DUAL P CHANNEL MOSFET, -20V, SOIC, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.5A; On Resistance Rds(on):0.025ohm; Transistor Mounting:Surface Mount; Power Dissipation Pd:1.1WRoHS Compliant: Yes

Supplier's Site
Mosfet, P Channel, -20V, -4.9A, Soic-8; Transistor Polarity Vishay - 69W7205 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -20V, -4.9A, Soic-8; Transistor Polarity Vishay
69W7205
Mosfet, P Channel, -20V, -4.9A, Soic-8; Transistor Polarity Vishay 69W7205
MOSFET, P CHANNEL, -20V, -4.9A, SOIC-8; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.9A; On Resistance Rds(on):0.04ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:2.5V RoHS Compliant: Yes

MOSFET, P CHANNEL, -20V, -4.9A, SOIC-8; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.9A; On Resistance Rds(on):0.04ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:2.5V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Radwell International Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 028564-SI4963BDY-T1-E3 278-SI4963BDY-T1-E3 SI4963BDY-T1-E3TR-ND SI4963BDY-T1-E3 22271524 SI4963BDY-T1-E3 SI4963BDY-T1-E3 97W2665 57J5690 69W7205
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4963BDY-T1-E3 20V 4.9A SOIC MOSFET Transistor FET, MOSFET Arrays MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs FET, MOSFET Arrays Dual Mosfet, Dual P Channel, -4.9 A, -20 V, 0.025 Ohm, -2.5 V, -1.4 V Rohs Compliant Vishay Dual P Channel Mosfet, -20V, Soic, Full Reel; Transistor Polarity Vishay Mosfet, P Channel, -20V, -4.9A, Soic-8; Transistor Polarity Vishay
Polarity P-Channel P-Channel P-Channel; 2 P-Channel (Dual) P-Channel P-Channel P-Channel
V(BR)DSS 20 volts 20 volts
PD 1100 milliwatts 2 milliwatts 1100 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SO Reel "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width) TO-3 TO-3 TO-3
Unlock Full Specs
to access all available technical data