Mosfet Array 2 P-Channel (Dual) 20V 4.9A 1.1W Surface Mount 8-SOIC
Mosfet Array 2 P-Channel (Dual) 20V 4.9A 1.1W Surface Mount 8-SOIC
Mosfet Array 2 P-Channel (Dual) 20V 4.9A 1.1W Surface Mount 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 028564-SI4963BDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.9A
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 21nC @ 4.5V
Maximum Rds On at Id,Vgs: 32 mOhm @ 6.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient
Trans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R Product overview: SI4963BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.9A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.9A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4963BDY-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET 2P-CH 20V 4.9A 8-SOIC
MOSFET 2P-CH 20V 4.9A 8SOIC
Dual MOSFET, Dual P Channel, -4.9 A, -20 V, 0.025 ohm, -2.5 V, -1.4 V RoHS Compliant: Yes
DUAL P CHANNEL MOSFET, -20V, SOIC, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.5A; On Resistance Rds(on):0.025ohm; Transistor Mounting:Surface Mount; Power Dissipation Pd:1.1WRoHS Compliant: Yes
MOSFET, P CHANNEL, -20V, -4.9A, SOIC-8; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.9A; On Resistance Rds(on):0.04ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:2.5V RoHS Compliant: Yes
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 4.9A I(D), 20V, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOP-8. FREE 2 YEAR RADWELL WARRANTY
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI4963BDY-T1-E3TR-ND | 028564-SI4963BDY-T1-E3 | 278-SI4963BDY-T1-E3 | SI4963BDY-T1-E3 | SI4963BDY-T1-E3 | SI4963BDY-T1-E3 | 97W2665 | 57J5690 | 69W7205 | 22271524 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4963BDY-T1-E3 | 20V 4.9A SOIC MOSFET Transistor | MOSFET | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual Mosfet, Dual P Channel, -4.9 A, -20 V, 0.025 Ohm, -2.5 V, -1.4 V Rohs Compliant Vishay | Dual P Channel Mosfet, -20V, Soic, Full Reel; Transistor Polarity Vishay | Mosfet, P Channel, -20V, -4.9A, Soic-8; Transistor Polarity Vishay | Transistor |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | Reel | 8-SOIC (0.154", 3.90mm Width) | TO-3 | TO-3 | TO-3 | |||
| Polarity | P-Channel | P-Channel | P-Channel; 2 P-Channel (Dual) | P-Channel | P-Channel | P-Channel | ||||
| V(BR)DSS | 20 volts | 20 volts | ||||||||
| PD | 1100 milliwatts | 2 milliwatts | 1100 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
