MOSFET 2P-CH 30V 3.7A 8-SOIC Product overview: SI4953ADY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 3.7A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.7A, SOIC, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4953ADY-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 099812-SI4953ADY-T1-
Packaging: Cut Reel
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: Si4953ADY
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.7A
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 25nC @ 10V
Maximum Rds On at Id,Vgs: 53 mOhm @ 4.9A, 10V
Alternative Parts (Cross-Reference): AUIRF7316Q; FW113; FDS4953-NF40; AF4953PSLA;
Introduction Date: July 18, 2000
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
DUAL P CH MOSFET; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.7A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation Pd:2W RoHS Compliant: Yes
MOSFET 2P-CH 30V 3.7A 8-SOIC
DUAL P CHANNEL MOSFET, -30V, SOIC; TRANSISTOR POLARITY:P CHANNEL; CONTINUOUS DRAIN CURRENT ID:-3.7A; DRAIN SOURCE VOLTAGE VDS:-30V; ON RESISTANCE RDS(. FREE 2 YEAR RADWELL WARRANTY
MOSFET 2P-CH 30V 3.7A 8-SOIC
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Radwell International | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-SI4953ADY-T1-E3 | 099812-SI4953ADY-T1-E3 | 35K3486 | SI4953ADY-T1-E3 | 22271512 | SI4953ADY-T1-E3 |
| Product Name | 30V 3.7A SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4953ADY-T1-E3 | Dual P Ch Mosfet; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | FET, MOSFET Arrays |
| Package Type | Cut Tape (CT) | SOT3; 8-SO | TO-3 | 8-SOIC (0.154", 3.90mm Width) | ||
| Packing Method | Cut Tape (CT) | Tape Reel; Cut Reel | Cut Tape (CT),Digi-ReelR | |||
| Polarity | P-Channel | P-Channel; 2 P-Channel (Dual) | ||||
| V(BR)DSS | 30 volts | 30 volts | ||||
| PD | 1100 milliwatts | 2000 milliwatts |
