MOSFET 30 Volt 3.5 Amp 2.0W Product overview: SI4947DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.0W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 2.0W, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI4947DY-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1092893-SI4947DY-T1-
Length: 5 mm
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): -30 V
Power Dissipation: 2 W
Height: 1.55 mm
Weight: 186.993455 mg
Number of Channels: 2
Number of Pins: 8
Width: 4 mm
Rise Time: 9 ns
Fall Time: 10 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SO
Popularity: Low
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
RoHS: Compliant
Min Operating Temperature: -55 °C
Element Configuration: Dual
Max Power Dissipation: 2 W
Turn-On Delay Time: 8 ns
Continuous Drain Current (ID): 3 A
Turn-Off Delay Time: 21 ns
Drain to Source Resistance: 85 mΩ
Gate to Source Voltage (Vgs): 20 V
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 285-SI4947DY-T1-E3 | 1092893-SI4947DY-T1-E3 |
| Product Name | 2.0W MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4947DY-T1-E3 |
| Polarity | P-Channel |