The Vishay Si4943CDY is a dual P-channel MOSFET designed for applications requiring efficient load and battery switching. It has a maximum drain-source voltage (V_DS) of -20 V and can handle continuous drain currents of up to -8 A. The on-state resistance (R_DS(on)) is specified at 0.0275 Ohm when the gate-source voltage (V_GS) is -4.5 V, and it achieves a lower resistance of 0.0192 Ohm at -10 V. This MOSFET is compliant with RoHS standards and is halogen-free, making it suitable for environmentally conscious designs. The device operates effectively within a junction temperature range of -50 to 150 ¬8C and has a maximum power dissipation of 3.1 W at 25 ¬8C. It is packaged in an SO-8 form factor, which is ideal for space-constrained applications. Engineers may consider this component for its low on-resistance and robust performance in switching applications, particularly in computer and gaming systems.
Mosfet Array 2 P-Channel (Dual) 20V 8A 3.1W Surface Mount 8-SOIC
Mosfet Array 2 P-Channel (Dual) 20V 8A 3.1W Surface Mount 8-SOIC
Mosfet Array 2 P-Channel (Dual) 20V 8A 3.1W Surface Mount 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 1096041-SI4943CDY-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 8A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 62nC @ 10V
Max Input Capacitance: 1945pF @ 10V
Maximum Rds On at Id,Vgs: 19.2 mOhm @ 8.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
P-Channel JFET, 20V, 8A, 19.2mR Rds(on), SOP-8 Product overview: SI4943CDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 20V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4943CDY-T1-GE3
MOSFET 2P-CH 20V 8A 8SOIC
Dual MOSFET, Dual P Channel, -8 A, -20 V, 0.0275 ohm, -4.5 V, -1 V RoHS Compliant: Yes
MOSFET, DUAL P CHANNEL, -20V, 0.0275OHM, -8A, SOIC-8; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.0275ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4943CDY-T1-GE3CT-ND | 1096041-SI4943CDY-T1-GE3 | 278-SI4943CDY-T1-GE3 | SI4943CDY-T1-GE3 | SI4943CDY-T1-GE3 | 97W2664 | 85W3212 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4943CDY-T1-GE3 | P-Channel 20V 8A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Dual Mosfet, Dual P Channel, -8 A, -20 V, 0.0275 Ohm, -4.5 V, -1 V Rohs Compliant Vishay | Mosfet, Dual P Channel, -20V, 0.0275Ohm, -8A, Soic-8; Transistor Polarity Vishay |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | TO-3 | TO-3 | |||
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | |||
| V(BR)DSS | 20 volts | ||||||
| PD | 3100 milliwatts | 3100 milliwatts |
