The Vishay Si4943BDY is a dual P-Channel MOSFET with a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) rating of 8.4A. It features a low on-resistance (Rds(on)) of 0.019Oc at a gate-source voltage (Vgs) of -10V, making it suitable for applications requiring efficient load and battery switching. The device is halogen-free and compliant with RoHS directives, ensuring it meets environmental standards. It is designed for surface mounting in an SO-8 package, which is advantageous for space-constrained applications. The operating temperature range is from -55¬8C to 150¬8C, providing versatility in various environments. This MOSFET is ideal for use in computer and gaming systems, as well as in battery management for 2-cell Li-Ion configurations.
Manufacturer: Vishay
Win Source Part Number: 028561-SI4943BDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6.3A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 25nC @ 5V
Maximum Rds On at Id,Vgs: 19 mOhm @ 8.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management, Computers & Computer Peripherals
P-CH MOSFET 20V 6.3A 19mR SOIC N Product overview: SI4943BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 6.3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6.3A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4943BDY-T1-E3 can be used for catalog matching and distributor lookup.
Mosfet Array 2 P-Channel (Dual) 20V 6.3A 1.1W Surface Mount 8-SOIC
Mosfet Array 2 P-Channel (Dual) 20V 6.3A 1.1W Surface Mount 8-SOIC
Mosfet Array 2 P-Channel (Dual) 20V 6.3A 1.1W Surface Mount 8-SOIC
MOSFET 2P-CH 20V 6.3A 8SOIC
DUAL P CHANNEL MOSFET, -20V, SOIC, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:8.4A; On Resistance Rds(on):0.019ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:8.4A; On Resistance Rds(on):0.016ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | 028561-SI4943BDY-T1-E3 | 278-SI4943BDY-T1-E3 | SI4943BDY-T1-E3DKR-ND | SI4943BDY-T1-E3 | SI4943BDY-T1-E3 | 57J5552 | 85W2152 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4943BDY-T1-E3 | 20V 6.3A SOIC MOSFET Transistor | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual P Channel Mosfet, -20V, Soic, Full Reel; Transistor Polarity Vishay | Transistor Polarity Vishay |
| Polarity | P-Channel | P-Channel | P-Channel | ||||
| V(BR)DSS | 20 volts | ||||||
| PD | 1100 milliwatts | 1100 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | |||||
| Package Type | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154, 3.90mm Width) | TO-3 | TO-3 |
