Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4942DY-T1-GE3 SI4942DY-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 113177-SI4942DY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 5.3A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 32nC @ 10V
Maximum Rds On at Id,Vgs: 21 mOhm @ 7.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Mosfet Array 2 N-Channel (Dual) 40V 5.3A 1.1W Surface Mount 8-SOIC

MOSFET 2N-CH 40V 5.3A 8SOIC Product overview: SI4942DY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 5.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 5.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4942DY-T1-GE3 can be used for catalog matching and distributor lookup.