MOSFET 2N-CH 30V 5.8A 8-SOIC
Mosfet Array 2 N-Channel (Dual) 30V 5.8A 2.3W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 30V 5.8A 2.3W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 30V 5.8A 2.3W Surface Mount 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 028559-SI4936CDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2.3W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.8A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 9nC @ 10V
Max Input Capacitance: 325pF @ 15V
Maximum Rds On at Id,Vgs: 40 mOhm @ 5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient
MOSFET, DUAL N-CH, 30V, 5.8A, 150DEG C; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.8A; On Resistance Rds(on):0.033ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; MSL:-RoHS Compliant: Yes
MOSFET 2N-CH 30V 5.8A 8SOIC
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI4936CDY-T1-GE3 | SI4936CDY-T1-GE3CT-ND | 028559-SI4936CDY-T1-GE3 | 70AC6509 | SI4936CDY-T1-GE3 | SI4936CDY-T1-GE3 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4936CDY-T1-GE3 | Mosfet, Dual N-Ch, 30V, 5.8A, 150Deg C; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 30 volts | 30 volts | ||||
| IDSS | 5800 milliamps | 5800 milliamps | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
