Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4936CDY-T1-GE3 SI4936CDY-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 028559-SI4936CDY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2.3W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.8A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 9nC @ 10V Max Input Capacitance: 325pF @ 15V Maximum Rds On at Id,Vgs: 40 mOhm @ 5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 028559-SI4936CDY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2.3W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.8A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 9nC @ 10V Max Input Capacitance: 325pF @ 15V Maximum Rds On at Id,Vgs: 40 mOhm @ 5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4936CDY-T1-GE3 - 028559-SI4936CDY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4936CDY-T1-GE3
028559-SI4936CDY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4936CDY-T1-GE3 028559-SI4936CDY-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028559-SI4936CDY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2.3W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.8A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 9nC @ 10V Max Input Capacitance: 325pF @ 15V Maximum Rds On at Id,Vgs: 40 mOhm @ 5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 028559-SI4936CDY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2.3W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.8A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 9nC @ 10V
Max Input Capacitance: 325pF @ 15V
Maximum Rds On at Id,Vgs: 40 mOhm @ 5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
FET, MOSFET Arrays - SI4936CDY-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI4936CDY-T1-GE3CT-ND
FET, MOSFET Arrays SI4936CDY-T1-GE3CT-ND
Mosfet Array 2 N-Channel (Dual) 30V 5.8A 2.3W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 30V 5.8A 2.3W Surface Mount 8-SOIC

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FET, MOSFET Arrays - SI4936CDY-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI4936CDY-T1-GE3TR-ND
FET, MOSFET Arrays SI4936CDY-T1-GE3TR-ND
Mosfet Array 2 N-Channel (Dual) 30V 5.8A 2.3W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 30V 5.8A 2.3W Surface Mount 8-SOIC

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FET, MOSFET Arrays - SI4936CDY-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI4936CDY-T1-GE3DKR-ND
FET, MOSFET Arrays SI4936CDY-T1-GE3DKR-ND
Mosfet Array 2 N-Channel (Dual) 30V 5.8A 2.3W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 30V 5.8A 2.3W Surface Mount 8-SOIC

Buy Now Datasheet
Singapore
N-Channel 30V 5A MOSFET Transistor
278-SI4936CDY-T1-GE3
N-Channel 30V 5A MOSFET Transistor 278-SI4936CDY-T1-GE3
N-Channel JFET, 30V, 5A ID, 40mR Rds On, SO Package Product overview: SI4936CDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4936CDY-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel JFET, 30V, 5A ID, 40mR Rds On, SO Package Product overview: SI4936CDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4936CDY-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - SI4936CDY-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI4936CDY-T1-GE3
FET, MOSFET Arrays SI4936CDY-T1-GE3
MOSFET 2N-CH 30V 5.8A 8-SOIC

MOSFET 2N-CH 30V 5.8A 8-SOIC

Supplier's Site Datasheet
Mosfet, Dual N-Ch, 30V, 5.8A, 150Deg C; Transistor Polarity Vishay - 70AC6509 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N-Ch, 30V, 5.8A, 150Deg C; Transistor Polarity Vishay
70AC6509
Mosfet, Dual N-Ch, 30V, 5.8A, 150Deg C; Transistor Polarity Vishay 70AC6509
MOSFET, DUAL N-CH, 30V, 5.8A, 150DEG C; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.8A; On Resistance Rds(on):0.033ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; MSL:-RoHS Compliant: Yes

MOSFET, DUAL N-CH, 30V, 5.8A, 150DEG C; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.8A; On Resistance Rds(on):0.033ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; MSL:-RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4936CDY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4936CDY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4936CDY-T1-GE3
MOSFET 2N-CH 30V 5.8A 8SOIC

MOSFET 2N-CH 30V 5.8A 8SOIC

Supplier's Site
MOSFET 30V Vds 20V Vgs SO-8

MOSFET 30V Vds 20V Vgs SO-8

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Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 028559-SI4936CDY-T1-GE3 SI4936CDY-T1-GE3CT-ND 278-SI4936CDY-T1-GE3 SI4936CDY-T1-GE3 70AC6509 SI4936CDY-T1-GE3 SI4936CDY-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4936CDY-T1-GE3 FET, MOSFET Arrays N-Channel 30V 5A MOSFET Transistor FET, MOSFET Arrays Mosfet, Dual N-Ch, 30V, 5.8A, 150Deg C; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; 2 N-Channel (Dual)
V(BR)DSS 30 volts 30 volts
PD 2300 milliwatts 2300 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SO "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width) TO-3
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