Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4936CDY-T1-GE3 SI4936CDY-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 028559-SI4936CDY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2.3W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.8A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 9nC @ 10V Max Input Capacitance: 325pF @ 15V Maximum Rds On at Id,Vgs: 40 mOhm @ 5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 028559-SI4936CDY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2.3W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.8A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 9nC @ 10V Max Input Capacitance: 325pF @ 15V Maximum Rds On at Id,Vgs: 40 mOhm @ 5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4936CDY-T1-GE3 - 028559-SI4936CDY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4936CDY-T1-GE3
028559-SI4936CDY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4936CDY-T1-GE3 028559-SI4936CDY-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028559-SI4936CDY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2.3W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.8A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 9nC @ 10V Max Input Capacitance: 325pF @ 15V Maximum Rds On at Id,Vgs: 40 mOhm @ 5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 028559-SI4936CDY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2.3W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.8A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 9nC @ 10V
Max Input Capacitance: 325pF @ 15V
Maximum Rds On at Id,Vgs: 40 mOhm @ 5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
FET, MOSFET Arrays - SI4936CDY-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI4936CDY-T1-GE3
FET, MOSFET Arrays SI4936CDY-T1-GE3
MOSFET 2N-CH 30V 5.8A 8-SOIC

MOSFET 2N-CH 30V 5.8A 8-SOIC

Supplier's Site Datasheet
FET, MOSFET Arrays - SI4936CDY-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI4936CDY-T1-GE3CT-ND
FET, MOSFET Arrays SI4936CDY-T1-GE3CT-ND
Mosfet Array 2 N-Channel (Dual) 30V 5.8A 2.3W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 30V 5.8A 2.3W Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - SI4936CDY-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI4936CDY-T1-GE3TR-ND
FET, MOSFET Arrays SI4936CDY-T1-GE3TR-ND
Mosfet Array 2 N-Channel (Dual) 30V 5.8A 2.3W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 30V 5.8A 2.3W Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - SI4936CDY-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI4936CDY-T1-GE3DKR-ND
FET, MOSFET Arrays SI4936CDY-T1-GE3DKR-ND
Mosfet Array 2 N-Channel (Dual) 30V 5.8A 2.3W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 30V 5.8A 2.3W Surface Mount 8-SOIC

Buy Now Datasheet
MOSFET 30V Vds 20V Vgs SO-8

MOSFET 30V Vds 20V Vgs SO-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4936CDY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4936CDY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4936CDY-T1-GE3
MOSFET 2N-CH 30V 5.8A 8SOIC

MOSFET 2N-CH 30V 5.8A 8SOIC

Supplier's Site
Mosfet, Dual N-Ch, 30V, 5.8A, 150Deg C; Transistor Polarity Vishay - 70AC6509 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N-Ch, 30V, 5.8A, 150Deg C; Transistor Polarity Vishay
70AC6509
Mosfet, Dual N-Ch, 30V, 5.8A, 150Deg C; Transistor Polarity Vishay 70AC6509
MOSFET, DUAL N-CH, 30V, 5.8A, 150DEG C; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.8A; On Resistance Rds(on):0.033ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; MSL:-RoHS Compliant: Yes

MOSFET, DUAL N-CH, 30V, 5.8A, 150DEG C; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.8A; On Resistance Rds(on):0.033ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; MSL:-RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 028559-SI4936CDY-T1-GE3 SI4936CDY-T1-GE3 SI4936CDY-T1-GE3CT-ND SI4936CDY-T1-GE3 SI4936CDY-T1-GE3 70AC6509
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4936CDY-T1-GE3 FET, MOSFET Arrays FET, MOSFET Arrays MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, Dual N-Ch, 30V, 5.8A, 150Deg C; Transistor Polarity Vishay
Polarity N-Channel N-Channel; 2 N-Channel (Dual)
V(BR)DSS 30 volts 30 volts
PD 2300 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SO 8-SOIC (0.154", 3.90mm Width) "8-SOIC (0.154"", 3.90mm Width)" TO-3
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