Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4936CDY-T1-E3 SI4936CDY-T1-E3

Manufacturer: Vishay
Win Source Part Number: 042613-SI4936CDY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2.3W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.8A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 9nC @ 10V
Max Input Capacitance: 325pF @ 15V
Maximum Rds On at Id,Vgs: 40 mOhm @ 5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient

MOSFET 2N-CH 30V 5.8A 8SOIC

Mosfet Array 2 N-Channel (Dual) 30V 5.8A 2.3W Surface Mount 8-SOIC

MOSFET 2N-CH 30V 5.8A 8SOIC

Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 Product overview: SI4936CDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 5.8A, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 5.8A, 30V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4936CDY-T1-E3 can be used for catalog matching and distributor lookup.