Vishay Intertechnology, Inc. FET, MOSFET Arrays SI4936BDY-T1-E3

MOSFET 2N-CH 30V 6.9A 8-SOIC

Mosfet Array 2 N-Channel (Dual) 30V 6.9A 2.8W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 30V 6.9A 2.8W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 30V 6.9A 2.8W Surface Mount 8-SOIC

Dual N-Ch MOSFET, 30V, 6.9A, 35mR Rds On, SOIC Product overview: SI4936BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V, 6.9A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, 6.9A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4936BDY-T1-E3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 028557-SI4936BDY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: Si4936BDY
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2.8W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.9A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 530pF @ 15V
Maximum Rds On at Id,Vgs: 35 mOhm @ 5.9A, 10V
Alternative Parts (Cross-Reference): LT4920C; AUIRF7303QTR; BSO350N03; FDS6984S-NL;
Introduction Date: February 21, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance