Manufacturer: Vishay
Win Source Part Number: 028558-SI4936ADY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.4A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 10V
Maximum Rds On at Id,Vgs: 36 mOhm @ 5.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Mosfet Array 2 N-Channel (Dual) 30V 4.4A 1.1W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 30V 4.4A 1.1W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 30V 4.4A 1.1W Surface Mount 8-SOIC
MOSFET, Power;Dual N-Ch;VDSS 30V;RDS(ON) 0.032Ohm;ID 4.4A;SO-8;PD 1.1W;VGS +/-20
MOSFET 2N-CH 30V 4.4A 8SOIC
30V 4.4A 1.1W 36mΩ@10V,5.9A 3V@250uA 2 N-Channel SOIC-8_150mil MOSFETs ROHS
DUAL N CHANNEL MOSFET, 30V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.9A; On Resistance Rds(on):0.036ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.9A; On Resistance Rds(on):0.032ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028558-SI4936ADY-T1-E3 | SI4936ADY-T1-E3CT-ND | 70026117 | SI4936ADY-T1-E3 | 17930-SI4936ADY-T1-E3 | 06J7983 | 85W2151 | SI4936ADY-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4936ADY-T1-E3 | FET, MOSFET Arrays | MOSFET, Power;Dual N-Ch;VDSS 30V;RDS(ON) 0.032Ohm;ID 4.4A;SO-8;PD 1.1W;VGS +/-20 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | 30V 4.4A 1.1W 36mΩ@10V,5.9A 3V@250uA 2 N-Channel SOIC-8_150mil MOSFETs ROHS | Dual N Channel Mosfet, 30V, Soic, Full Reel; Transistor Polarity Vishay | Transistor Polarity Vishay | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 30 volts | 30 volts | ||||||
| PD | 1100 milliwatts | 1100 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | |||||||
| Package Type | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width)" | SO-8 | TO-3 | TO-3 |
