Vishay Precision Group FET, MOSFET Arrays SI4931DY-T1-E3

MOSFET 2P-CH 12V 6.7A 8-SOIC

P-CH JFET 12V 6.7A 18mR SOIC N T/R Product overview: SI4931DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 6.7A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 6.7A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4931DY-T1-E3 can be used for catalog matching and distributor lookup.

Mosfet Array 2 P-Channel (Dual) 12V 6.7A 1.1W Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 12V 6.7A 1.1W Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 12V 6.7A 1.1W Surface Mount 8-SOIC

Manufacturer: Vishay
Win Source Part Number: 028556-SI4931DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 6.7A
Gate-Source Threshold Voltage: 1V @ 350μA
Max Gate Charge: 52nC @ 4.5V
Maximum Rds On at Id,Vgs: 18 mOhm @ 8.9A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited