The Si4925DY-T1 is a dual P-channel MOSFET in an SO-8 package for power switching applications. It is rated for a maximum drain-source voltage of -30 V and continuous drain current of -6.3 A at 25°C and -5.0 A at 70°C. The device has a maximum power dissipation of 2 W at 25°C and 1.3 W at 70°C. On-state resistance is 0.032 Ω at -10 V gate-source voltage and 0.045 Ω at -4.5 V. Operating junction and storage temperatures range from -55°C to 150°C. The part is Pb-free and meets RoHS requirements. Thermal resistance is 85°C/W junction-to-ambient and 28°C/W junction-to-foot in steady state.
MOSFET 30V 6.1A 2W Product overview: SI4925DY-T1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6.1A, 2W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.1A, 2W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4925DY-T1 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI4925DY-T1 |
| Product Name | 30V 6.1A 2W MOSFET Transistor |
| Polarity | P-Channel |
