TRANSISTOR 5300 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal Product overview: SI4925BDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, 5300 mA, 30 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 5300 mA, 30 V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI4925BDY-T1-GE
MOSFET 2P-CH 30V 5.3A 8-SOIC
MOSFET 2P-CH 30V 5.3A 8SOIC
Mosfet Array 2 P-Channel (Dual) 30V 5.3A 1.1W Surface Mount 8-SOIC
MOSFET 2P-CH 30V 5.3A 8SOIC
Manufacturer: Vishay
Win Source Part Number: 894613-SI4925BDY-T1-
Series: TrenchFET®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: Mosfet Array 2 P-Channel (Dual) 30V 5.3A 1.1W Surface Mount 8-SOIC
Package: 8-SOIC (0.154", 3.90mm Width)
Package: Reel - TR
Mounting: Surface Mount
Family Name: SI4925
Categories: Discrete Semiconductor Products
Case / Package: 8-SOIC
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
Quantity per package: 2500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
DUAL P CH MOSFET; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.3A; On Resistance Rds(on):0.02ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation Pd:1.1W RoHS Compliant: Yes
DUAL P CH MOSFET; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.3A; On Resistance Rds(on):0.02ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation Pd:1.1W RoHS Compliant: Yes
MOSFET 2P-CH 30V 5.3A 8SOIC
MOSFET 30V 7.1A 2.0W 25mohm @ 10V
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-SI4925BDY-T1-GE3 | SI4925BDY-T1-GE3 | 742-SI4925BDY-T1-GE3CT-ND | 894613-SI4925BDY-T1-GE3 | 84R8065 | SI4925BDY-T1-GE3 | SI4925BDY-T1-GE3 |
| Product Name | P-Channel Dual 5300 mA 30 V MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4925BDY-T1-GE3 | Dual P Ch Mosfet; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel; 2 P-Channel (Dual) | P-Channel | ||||
| PD | 1100 milliwatts | 1100 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts |
