Mosfet Array 2 N-Channel (Dual) 30V 8A 3.1W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 30V 8A 3.1W Surface Mount 8-SOIC
N-Channel JFET, 30V, 8A, 16mR Rds(on), 2-Ch, SOP-8 Product overview: SI4922BDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI4922BDY-T1-GE
Manufacturer: Vishay
Win Source Part Number: 1096035-SI4922BDY-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8A
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 62nC @ 10V
Max Input Capacitance: 2070pF @ 15V
Maximum Rds On at Id,Vgs: 16 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
DUAL N CHANNEL MOSFET, 30V, 8A; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.024ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:2.5V RoHS Compliant: Yes
DUAL N CHANNEL MOSFET, 30V, 8A; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.024ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:2.5V RoHS Compliant: Yes
MOSFET 2N-CH 30V 8A 8-SOIC
MOSFET 2N-CH 30V 8A 8SOIC
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI4922BDY-T1-GE3TR-ND | 2088-SI4922BDY-T1-GE3 | 1096035-SI4922BDY-T1-GE3 | 15R5121 | SI4922BDY-T1-GE3 | SI4922BDY-T1-GE3 |
| Product Name | FET, MOSFET Arrays | N-Channel 30V 8A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4922BDY-T1-GE3 | Dual N Channel Mosfet, 30V, 8A; Transistor Polarity Vishay | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | TO-3 | 8-SOIC (0.154", 3.90mm Width) | ||
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | ||
| PD | 2000 milliwatts | 3100 milliwatts | ||||
| TJ | -50 C (-58 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| V(BR)DSS | 30 volts | 30 volts |
