Mosfet Array 2 N-Channel (Half Bridge) 30V 10A, 10.5A 3.3W, 3.5W Surface Mount 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 1249238-SI4916DY-T1-
Series: LITTLE FOOT
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
Power - Max: 3.3W, 3.5W
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.vishay.com
Manufacturer Package: 8-SO
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 10nC @ 4.5V
Rds On (Maximum) @ Id, Vgs: 18 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): SH8K10SGZETB; SH8K10STB; AO4940;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
MOSFET 2N-CH 30V 10A 8-SOIC
MOSFET 2N-CH 30V 10A/10.5A 8SOIC Product overview: SI4916DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10A, 10.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, 10.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4916DY-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 30V 10A/10.5A 8SOIC
MOSFET 2N-CH 30V 10A 8-SOIC
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4916DY-T1-E3TR-ND | 1249238-SI4916DY-T1-E3 | SI4916DY-T1-E3 | 289-SI4916DY-T1-E3 | SI4916DY-T1-E3 | 880-SI4916DY-T1-E3 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4916DY-T1-E3 | FET, MOSFET Arrays | 30V 10A 10.5A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET 2N-CH 30V 10A 8-SOIC |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3 | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | ||
| Polarity | N-Channel | N-Channel; 2 N-Channel (Half Bridge) | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Packing Method | Tape Reel; Reel - TR | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | Tape Reel; Tape & Reel (TR) | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON |
