Vishay Intertechnology, Inc. FET, MOSFET Arrays SI4916DY-T1-E3

Description
Mosfet Array 2 N-Channel (Half Bridge) 30V 10A, 10.5A 3.3W, 3.5W Surface Mount 8-SOIC
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Half Bridge) 30V 10A, 10.5A 3.3W, 3.5W Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SI4916DY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI4916DY-T1-E3TR-ND
FET, MOSFET Arrays SI4916DY-T1-E3TR-ND
Mosfet Array 2 N-Channel (Half Bridge) 30V 10A, 10.5A 3.3W, 3.5W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Half Bridge) 30V 10A, 10.5A 3.3W, 3.5W Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - SI4916DY-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI4916DY-T1-E3
FET, MOSFET Arrays SI4916DY-T1-E3
MOSFET 2N-CH 30V 10A 8-SOIC

MOSFET 2N-CH 30V 10A 8-SOIC

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4916DY-T1-E3 - 1249238-SI4916DY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4916DY-T1-E3
1249238-SI4916DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4916DY-T1-E3 1249238-SI4916DY-T1-E3
Manufacturer: Vishay Win Source Part Number: 1249238-SI4916DY-T1- E3 Series: LITTLE FOOT Packaging: Reel - TR Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-SOIC (0.154", 3.90mm Width) Mounting: SMD FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A Power - Max: 3.3W, 3.5W Categories: Discrete Semiconductor Products Manufacturer Homepage: www.vishay.com Manufacturer Package: 8-SO Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 3V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 10nC @ 4.5V Rds On (Maximum) @ Id, Vgs: 18 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): SH8K10SGZETB; SH8K10STB; AO4940; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 1249238-SI4916DY-T1-E3
Series: LITTLE FOOT
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
Power - Max: 3.3W, 3.5W
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.vishay.com
Manufacturer Package: 8-SO
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 10nC @ 4.5V
Rds On (Maximum) @ Id, Vgs: 18 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): SH8K10SGZETB; SH8K10STB; AO4940;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
30V 10A 10.5A MOSFET Transistor
289-SI4916DY-T1-E3
30V 10A 10.5A MOSFET Transistor 289-SI4916DY-T1-E3
MOSFET 2N-CH 30V 10A/10.5A 8SOIC Product overview: SI4916DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10A, 10.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, 10.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4916DY-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 30V 10A/10.5A 8SOIC Product overview: SI4916DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10A, 10.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, 10.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4916DY-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET 2N-CH 30V 10A 8-SOIC - 880-SI4916DY-T1-E3 - Utmel Electronic Limited
Hong Kong, China
MOSFET 2N-CH 30V 10A 8-SOIC
880-SI4916DY-T1-E3
MOSFET 2N-CH 30V 10A 8-SOIC 880-SI4916DY-T1-E3
MOSFET 2N-CH 30V 10A 8-SOIC

MOSFET 2N-CH 30V 10A 8-SOIC

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4916DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4916DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4916DY-T1-E3
MOSFET 2N-CH 30V 10A/10.5A 8SOIC

MOSFET 2N-CH 30V 10A/10.5A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI4916DY-T1-E3TR-ND SI4916DY-T1-E3 1249238-SI4916DY-T1-E3 289-SI4916DY-T1-E3 880-SI4916DY-T1-E3 SI4916DY-T1-E3
Product Name FET, MOSFET Arrays FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4916DY-T1-E3 30V 10A 10.5A MOSFET Transistor MOSFET 2N-CH 30V 10A 8-SOIC Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width) SOT3 Tape & Reel (TR)
Polarity N-Channel; 2 N-Channel (Half Bridge) N-Channel
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 30 volts 30 volts
IDSS 10000 milliamps
Unlock Full Specs
to access all available technical data