Manufacturer: Vishay
Win Source Part Number: 1249238-SI4916DY-T1-
Series: LITTLE FOOT
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
Power - Max: 3.3W, 3.5W
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.vishay.com
Manufacturer Package: 8-SO
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 10nC @ 4.5V
Rds On (Maximum) @ Id, Vgs: 18 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): SH8K10SGZETB; SH8K10STB; AO4940;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
MOSFET 2N-CH 30V 10A/10.5A 8SOIC Product overview: SI4916DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10A, 10.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, 10.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4916DY-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 30V 10A 8-SOIC
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MOSFET 2N-CH 30V 10A 8-SOIC
MOSFET 2N-CH 30V 10A/10.5A 8SOIC
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1249238-SI4916DY-T1-E3 | 289-SI4916DY-T1-E3 | SI4916DY-T1-E3 | SI4916DY-T1-E3TR-ND | 880-SI4916DY-T1-E3 | SI4916DY-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4916DY-T1-E3 | 30V 10A 10.5A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFET 2N-CH 30V 10A 8-SOIC | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Half Bridge) | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | SOT3 | Tape & Reel (TR) | 8-SOIC (0.154", 3.90mm Width) | "8-SOIC (0.154"", 3.90mm Width)" | ||
| Packing Method | Tape Reel; Reel - TR | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON |