Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4914DY-T1-E3 SI4914DY-T1-E3

Manufacturer: Vishay
Win Source Part Number: 099886-SI4914DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.1W, 1.16W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.5A, 5.7A
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 8.5nC @ 4.5V
Maximum Rds On at Id,Vgs: 23 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient

MOSFET 2N-CH 30V 5.5A/5.7A 8SOIC Product overview: SI4914DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.5A, 5.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.5A, 5.7A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4914DY-T1-E3 can be used for catalog matching and distributor lookup.

Mosfet Array 2 N-Channel (Half Bridge) 30V 5.5A, 5.7A 1.1W, 1.16W Surface Mount 8-SOIC