Vishay Intertechnology, Inc. FET, MOSFET Arrays SI4914DY-T1-E3

Description
Mosfet Array 2 N-Channel (Half Bridge) 30V 5.5A, 5.7A 1.1W, 1.16W Surface Mount 8-SOIC
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Half Bridge) 30V 5.5A, 5.7A 1.1W, 1.16W Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SI4914DY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI4914DY-T1-E3TR-ND
FET, MOSFET Arrays SI4914DY-T1-E3TR-ND
Mosfet Array 2 N-Channel (Half Bridge) 30V 5.5A, 5.7A 1.1W, 1.16W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Half Bridge) 30V 5.5A, 5.7A 1.1W, 1.16W Surface Mount 8-SOIC

Buy Now Datasheet
Singapore
30V 5.5A 5.7A MOSFET Transistor
289-SI4914DY-T1-E3
30V 5.5A 5.7A MOSFET Transistor 289-SI4914DY-T1-E3
MOSFET 2N-CH 30V 5.5A/5.7A 8SOIC Product overview: SI4914DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.5A, 5.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.5A, 5.7A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4914DY-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 30V 5.5A/5.7A 8SOIC Product overview: SI4914DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.5A, 5.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.5A, 5.7A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4914DY-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4914DY-T1-E3 - 099886-SI4914DY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4914DY-T1-E3
099886-SI4914DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4914DY-T1-E3 099886-SI4914DY-T1-E3
Manufacturer: Vishay Win Source Part Number: 099886-SI4914DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1.1W, 1.16W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.5A, 5.7A Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 8.5nC @ 4.5V Maximum Rds On at Id,Vgs: 23 mOhm @ 7A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 099886-SI4914DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.1W, 1.16W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.5A, 5.7A
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 8.5nC @ 4.5V
Maximum Rds On at Id,Vgs: 23 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4914DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4914DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4914DY-T1-E3
MOSFET 2N-CH 30V 5.5A/5.7A 8SOIC

MOSFET 2N-CH 30V 5.5A/5.7A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI4914DY-T1-E3TR-ND 289-SI4914DY-T1-E3 099886-SI4914DY-T1-E3 SI4914DY-T1-E3
Product Name FET, MOSFET Arrays 30V 5.5A 5.7A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4914DY-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type "8-SOIC (0.154"", 3.90mm Width)" Tape & Reel (TR) SOT3; 8-SO
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Packing Method Tape & Reel (TR) Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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