Vishay Intertechnology, Inc. FET, MOSFET Arrays SI4910DY-T1-E3

Description
Mosfet Array 2 N-Channel (Dual) 40V 7.6A 3.1W Surface Mount 8-SOIC
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 40V 7.6A 3.1W Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SI4910DY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI4910DY-T1-E3TR-ND
FET, MOSFET Arrays SI4910DY-T1-E3TR-ND
Mosfet Array 2 N-Channel (Dual) 40V 7.6A 3.1W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 40V 7.6A 3.1W Surface Mount 8-SOIC

Buy Now Datasheet
Singapore
40V 7.6A MOSFET Transistor
289-SI4910DY-T1-E3
40V 7.6A MOSFET Transistor 289-SI4910DY-T1-E3
MOSFET 2N-CH 40V 7.6A 8SOIC Product overview: SI4910DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 7.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 7.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4910DY-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 40V 7.6A 8SOIC Product overview: SI4910DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 7.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 7.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4910DY-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4910DY-T1-E3 - 123998-SI4910DY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4910DY-T1-E3
123998-SI4910DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4910DY-T1-E3 123998-SI4910DY-T1-E3
Manufacturer: Vishay Win Source Part Number: 123998-SI4910DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 3.1W Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 7.6A Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 32nC @ 10V Max Input Capacitance: 855pF @ 20V Maximum Rds On at Id,Vgs: 27 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 123998-SI4910DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.1W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 7.6A
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 32nC @ 10V
Max Input Capacitance: 855pF @ 20V
Maximum Rds On at Id,Vgs: 27 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4910DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4910DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4910DY-T1-E3
MOSFET 2N-CH 40V 7.6A 8SOIC

MOSFET 2N-CH 40V 7.6A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI4910DY-T1-E3TR-ND 289-SI4910DY-T1-E3 123998-SI4910DY-T1-E3 SI4910DY-T1-E3
Product Name FET, MOSFET Arrays 40V 7.6A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4910DY-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type "8-SOIC (0.154"", 3.90mm Width)" Tape & Reel (TR) SOT3; 8-SO
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Packing Method Tape & Reel (TR) Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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