Manufacturer: Vishay
Win Source Part Number: 1096030-SI4904DY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.25W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 8A
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 85nC @ 10V
Max Input Capacitance: 2390pF @ 20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
N-Channel JFET, 40V, 8A, 16mR Rds On, SOIC-8 Product overview: SI4904DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 8A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 8A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4904DY-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 40V 8A 8-SOIC
Mosfet Array 2 N-Channel (Dual) 40V 8A 3.25W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 40V 8A 3.25W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 40V 8A 3.25W Surface Mount 8-SOIC
MOSFET 2N-CH 40V 8A 8SOIC
DUAL N CHANNEL MOSFET, 40V, 8A; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.013ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
DUAL N CHANNEL MOSFET, 40V, 8A; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.013ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1096030-SI4904DY-T1-GE3 | 278-SI4904DY-T1-GE3 | SI4904DY-T1-GE3 | SI4904DY-T1-GE3DKR-ND | SI4904DY-T1-GE3 | 15R5114 | SI4904DY-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4904DY-T1-GE3 | N-Channel 40V 8A SOIC MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual N Channel Mosfet, 40V, 8A; Transistor Polarity Vishay | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | |||
| V(BR)DSS | 40 volts | 40 volts | |||||
| PD | 3250 milliwatts | 2000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | "8-SOIC (0.154"", 3.90mm Width)" | TO-3 |
