The Dual N-Channel MOSFET from Vishay, part number Si4900DY, features a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) rating of 5.3A. It has a low on-state resistance (R_DS(on)) of 0.058Oc at a gate-source voltage (V_GS) of 10V, and 0.072Oc at 4.5V. The total gate charge (Q_g) is typically 13 nC, making it suitable for applications requiring efficient switching. This MOSFET is halogen-free and compliant with RoHS standards, ensuring it meets environmental regulations. It is packaged in a surface mount SO-8 configuration, which is advantageous for space-constrained designs. The device is ideal for use in LCD TV CCFL inverters and other similar applications.
Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC
Win Source Part Number: 965566-SI4900DY-T1-G
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power - Max: 3.1W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): SI4946BEY-T1-E3; SQ4937EY-T1-GE3; SI4953DY; FDS9412; FDS6990S; FDS4410ASI4900DY-T1-
ECCN: EAR99
Fake Threat In the Open Market: 83 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SI4900DY-T1-GE3DKR,S
Base Product Number: SI4900
MOSFET 2N-CH 60V 5.3A 8SOIC Product overview: SI4900DY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 5.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 5.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4900DY-T1-GE3 can be used for catalog matching and distributor lookup.
DUAL N CHANNEL MOSFET, 60V, 5.3A; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5.3A; On Resistance Rds(on):0.046ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
DUAL N CHANNEL MOSFET, 60V, 5.3A; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5.3A; On Resistance Rds(on):0.046ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
MOSFET 60V 5.3A 3.1W 58mohm @ 10V
MOSFET 2N-CH 60V 5.3A 8SOIC
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI4900DY-T1-GE3CT-ND | 965566-SI4900DY-T1-GE3 | 289-SI4900DY-T1-GE3 | 26R1893 | SI4900DY-T1-GE3 | SI4900DY-T1-GE3 |
| Product Name | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | 60V 5.3A MOSFET Transistor | Dual N Channel Mosfet, 60V, 5.3A; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3 | Tape & Reel (TR) | TO-3 | ||
| Polarity | N-Channel | N-Channel | N-Channel | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| MOSFET Operating Mode | Enhancement |
